Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1− xBix layers grown by Molecular Beam Epitaxy
Abstract Current-Voltage (IV), Capacitance-Voltage (CV), Deep Level Transient
Spectroscopy (DLTS), Laplace DLTS, Photoluminescence (PL) and Micro-Raman …
Spectroscopy (DLTS), Laplace DLTS, Photoluminescence (PL) and Micro-Raman …
Exciton localization and structural disorder of GaAs1− xBix/GaAs quantum wells grown by molecular beam epitaxy on (311) B GaAs substrates
GA Prando, VO Gordo, J Puustinen… - Semiconductor …, 2018 - iopscience.iop.org
In this work, we have investigated the structural and optical properties of GaAs (1− x) Bi
x/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311) B …
x/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311) B …
Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling
A series of gallium arsenide bismide device layers covering a range of growth conditions are
thoroughly probed by low-temperature, power-dependent photoluminescence …
thoroughly probed by low-temperature, power-dependent photoluminescence …
Molecular beam epitaxy of GaAsBi and related quaternary alloys
M Yoshimoto, K Oe - Molecular Beam Epitaxy, 2018 - Elsevier
Molecular beam epitaxy (MBE) growth of GaAs 1− x Bi x and related alloys opens up a new
means for exploiting metastable alloys exhibiting unique properties, such as luminescence …
means for exploiting metastable alloys exhibiting unique properties, such as luminescence …
Carrier dynamics in type-II GaAsSb/GaAs quantum wells
Time-resolved photoluminescence (PL) characteristics of type-II GaAsSb/GaAs quantum
wells are presented. The PL kinetics are determined by the dynamic band bending effect …
wells are presented. The PL kinetics are determined by the dynamic band bending effect …
Optical properties of GaAs1− xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311) B GaAs substrates
In this work, the electronic bandstructure of GaAs 1− x Bi x/GaAs single quantum well (QW)
samples grown by molecular beam epitaxy is investigated by photomodulated reflectance …
samples grown by molecular beam epitaxy is investigated by photomodulated reflectance …
Temperature dependence of E and E+ ΔSO transitions in In0. 53Ga0. 47BixAs1− x alloys studied by photoreflectance
R Kudrawiec, J Kopaczek, J Misiewicz… - Journal of Applied …, 2012 - pubs.aip.org
The temperature dependence of the energy gap (E 0) and the spin-orbit split (E 0+ Δ SO)
transitions has been studied by photoreflectance for In 0.53 Ga 0.47 Bi x As 1-x layers with …
transitions has been studied by photoreflectance for In 0.53 Ga 0.47 Bi x As 1-x layers with …
Carrier masses and band-gap temperature sensitivity in Ga (AsBi) alloys
The effects of external perturbations—such as temperature, photo-excited carrier density,
and magnetic field—on the electronic properties of Ga (AsBi) alloys are investigated in a …
and magnetic field—on the electronic properties of Ga (AsBi) alloys are investigated in a …
The effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure
The band line-up and band offset calculations of GaAs 0.978 Bi 0.022/GaAs single quantum
well with spatial changes of Bi composition were reported. The spatial Bi profile and a …
well with spatial changes of Bi composition were reported. The spatial Bi profile and a …
Temperature dependent double blueshift of photoluminescence peak position in MgZnO epitaxial layers
M Karaliunas, E Kuokstis, SY Ting, JJ Huang… - Journal of Applied …, 2014 - pubs.aip.org
Temperature dependent photoluminescence (PL) of MgZnO epitaxial layers with high Mg
content were studied to understand the effect of carrier localization on the PL dynamics …
content were studied to understand the effect of carrier localization on the PL dynamics …