GaAsBi layers of various Bi concentrations have been grown by molecular beam epitaxy on
a GaAs substrate and studied by electromodulation spectroscopy (EM). Optical transitions …

We have investigated the effect of long thermal annealing (3 h) at 200 C on the physical
properties of GaBiAs layers with a Bi concentration of 3% by using photoluminescence (PL) …

The addition of Bi isoelectronic dopants to GaAs provides an attractive avenue for tailoring
its electronic band structure, yet it also introduces less appealing and very strong hole …

The structural and electronic properties of wurtzite Tl x In 1− x N materials have been
investigated from first principles within the density functional theory (DFT). Band structures …

InP based dilute bismide InGaAsBi material is emerging as a promising candidate for
extending short wavelength infrared detection. One critical factor to limit the performance of …

The effects of Bi incorporation on the recombination process in wurtzite (WZ) GaBiAs
nanowires are studied by employing micro-photoluminescence (μ-PL) and time-resolved PL …

We have investigated polarization resolved photoluminescence (PL) of GaAs 1− x Bi x/GaAs
quantum wells (QWs) with different Bi concentrations in the dilute range (x< 2%) using …

While bismuth-related states are known to localize carriers in GaA s 1-x B ix alloys, the
localization behavior of distinct Bi pair, triplet, and cluster states bound above the valence …

We studied the effect of Bi incorporation on the carrier mobilities and electron effective mass
in the dilute Bismide alloy, GaAs 1− x Bi x, using electrical transport and photoluminescence …

Optical properties and carrier dynamics in 6.6, 10.4, and 14.4 nm wide Ga (Sb, Bi)/GaSb
quantum wells (QWs) with∼ 10%–11% of Bi were studied by photoluminescence (PL), time …