Abstract Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their
properties of bandgap reduction and spin–orbit splitting. The incorporation of Bi into …

Deep-and shallow-level defects in device-quality GaAs 1− x Bi x (x≤ 10.9%) are
investigated. Despite low-temperature growth, GaAs 1− x Bi x emits intense band-edge …

Abstract [eng] The thesis is dedicated to investigation of carrier dynamics in InN, InGaN, and
GaAsBi heterostructures by using light-induced transient gratings and differential …

In this paper, we report on the structural and optical properties of n-type Si-doped and p-type
Be-doped GaAs (1− x) Bi x thin films grown by molecular beam epitaxy on (311) B GaAs …

Abstract [eng] The last decade huge interest in devices, operating in telecommunication
wavelengths window (from 1 &# 956; m to 1.5 &# 956; m) was observed. Traditionally the …

Determining the spin properties of novel materials is necessary for the development of
proposed spin-based information processing devices, or spintronics. While existing optical …

In this paper, we present a review of optical and structural studies of $ GaBi_xAs_ {1-x} $
epilayers grown by Molecular Beam Epitaxy (MBE) on (311) B and (001) GaAs substrates …

Bismuth incorporation in GaAs produces a much larger reduction in the band gap than In or
Sb alloying, for the same increase in lattice constant. However, Bi is incorporated only at …

Due to the significant bandgap narrowing induced by dilute fractions of N and Bi in III-V
semiconductors, emerging dilute nitride-bismide semiconductor alloys are of significant …

Este projeto de pesquisa propõe um estudo sistemático das propriedades ópticas e
magneto-ópticas de filmes semicondutores de GaPN crescidos pela técnica de Epitaxia por …