Photonics, the technology of controlling the flow of photons, and electronics, the technology
of controlling the flow of charge carriers, come together in a natural way in the domain of …

Для твердых растворов Ga $ _ {1-x} $ In $ _ {x} $ As $ _ {y} $ P $ _ {1-y} $($ x $= 0.86, $ y
$= 0.07–0.42), полученных на InP методом газфазной эпитаксии из …

Quantum cascade laser (QCL) is becoming the leading laser source in the mid-infrared and
terahertz range due to its rapid development in power, efficiency, and spectral covering …

The possibility of manufacturing semiconductor heterostructures based on III–V compounds
for photovoltaic converters by diffusion methods is investigated. In a semiconductor wafer of …

Исследованы гетероструктуры GaInPAs/InP, полученные методом газофазной
эпитаксии из металлорганических соединений при температуре 600$^\circ $ C и …

A detailed analysis of photoluminescence (PL) from InP quantum dots (QDs) grown on Si
has been carried out to understand the effect of substrate/host material in the luminescence …

Fabrication and characterization of 785 nm laser grown by metalorganic chemical vapor
deposition Page 1 Mika Mähönen Fabrication and characterization of 785 nm laser grown by …

Utilizing major advances in III-V/Si epitaxy is a promising approach to realize high-efficiency,
cost efficient terrestrial solar power. The successful demonstration of planar GaP epitaxial …

Résumé Ce travail porte sur l'étude par simulation d'une structure de diode laser à
semiconducteur émettant par la surface VCSEL à base des matériaux AlGaAs/GaAs, en …

При исследовании полученных методом газофазной эпитаксии гетероструктур InAs $ _
{x} $ P $ _ {y} $ Sb $ _ {1-xy} $/InAs ($ x> $0.55) для рассогласованных с подложкой …