InAsSb-based infrared photodetectors: Thirty years later on
A Rogalski, P Martyniuk, M Kopytko, P Madejczyk… - Sensors, 2020 - mdpi.com
In 1989, one author of this paper (AR) published the very first review paper on InAsSb
infrared detectors. During the last thirty years, many scientific breakthroughs and …
infrared detectors. During the last thirty years, many scientific breakthroughs and …
[图书][B] Infrared and terahertz detectors
A Rogalski - 2019 - books.google.com
This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …
infrared and terahertz detector technology, from fundamental science to materials and …
[HTML][HTML] Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy
PT Webster, NA Riordan, S Liu… - Journal of Applied …, 2015 - pubs.aip.org
The structural and optical properties of lattice-matched InAs 0.911 Sb 0.089 bulk layers and
strain-balanced InAs/InAs 1− x Sb x (x∼ 0.1–0.4) superlattices grown on (100)-oriented …
strain-balanced InAs/InAs 1− x Sb x (x∼ 0.1–0.4) superlattices grown on (100)-oriented …
Driving Perpendicular Heat Flow:(p<? format?>×<? format?> n)-Type Transverse Thermoelectrics<? format?> for Microscale and Cryogenic Peltier Cooling
Whereas thermoelectric performance is normally limited by the figure of merit ZT, transverse
thermoelectrics can achieve arbitrarily large temperature differences in a single leg even …
thermoelectrics can achieve arbitrarily large temperature differences in a single leg even …
Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1− xSbx type-II superlattices
EH Steenbergen, JA Massengale, G Ariyawansa… - Journal of …, 2016 - Elsevier
The temperature-dependent and excitation-dependent photoluminescence (PL)
spectroscopy characterization of mid-wavelength infrared InAs/InAs 1− x Sb x type-II …
spectroscopy characterization of mid-wavelength infrared InAs/InAs 1− x Sb x type-II …
InAsSb-based photodetectors
EH Steenbergen - Mid-infrared Optoelectronics, 2020 - Elsevier
InAs 1–x Sb x has the smallest bandgap of conventional III-V ternary alloys and thus has
been of scientific interest for mid-wavelength (MWIR, 3–5 μm) and long-wavelength (8–12 …
been of scientific interest for mid-wavelength (MWIR, 3–5 μm) and long-wavelength (8–12 …
Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors
AD Prins, MK Lewis, ZL Bushell, SJ Sweeney… - Applied Physics …, 2015 - pubs.aip.org
We report pressure-dependent photoluminescence (PL) experiments under hydrostatic
pressures up to 2.16 GPa on a mid-wave infrared InAs/InAs 0.86 Sb 0.14 type-II superlattice …
pressures up to 2.16 GPa on a mid-wave infrared InAs/InAs 0.86 Sb 0.14 type-II superlattice …
Conduction- and Valence-Band Energies in Bulk InAs1−x Sb x and Type II InAs1−x Sb x /InAs Strained-Layer …
The energy gaps were studied in two types of structures: unrelaxed bulk InAs 1− x Sb x
layers with x= 0.2 to 0.46 grown on metamorphic buffers and type II InAs 1− x Sb x/InAs …
layers with x= 0.2 to 0.46 grown on metamorphic buffers and type II InAs 1− x Sb x/InAs …
InAs/InAsSb superlattice structure tailored for detection of the full midwave infrared spectral domain
Q Durlin, JP Perez, R Rossignol… - … Sensing and Nano …, 2017 - spiedigitallibrary.org
We studied the Ga-free InAs/InAsSb type-II superlattice (T2SL) period, thickness and
antimony composition, in order to define an optimized structure suitable for detection of the …
antimony composition, in order to define an optimized structure suitable for detection of the …
Luminescence of II–VI and III–V nanostructures
KD Mynbaev, AV Shilyaev, AA Semakova… - Opto-Electronics …, 2017 - Elsevier
Photoluminescence of HgCdTe epitaxial films and nanostructures and electroluminescence
of InAs (Sb, P) light-emitting diode (LED) nanoheterostructures were studied. For HgCdTe …
of InAs (Sb, P) light-emitting diode (LED) nanoheterostructures were studied. For HgCdTe …