A circuit includes a first word line coupled to a non-volatile memory (NVM) cell. A first path
includes a first inverter and a transistor. The transistor is coupled to the word line. The first …

Abstract Systems, methods, and apparatus are disclosed for implementing memory cells
having common source lines. The methods may include receiving a first voltage at a first …

A magnetoresistive random-access memory (MRAM) device includes a first cell selectively
connected to a first bit line and a second cell selectively connected to a second bit line. The …

BACKGROUND Non-volatile memory devices are currently in widespread use in electronic
components that require the retention of information when electrical power is unavailable …

Integrated circuit devices might include a controller configured to cause the integrated circuit
device to apply a first voltage level to a first conductor while applying a second voltage level …

A memory cell, which is a nonvolatile memory cell, includes a gate dielectric film having
charge storage layer capable of holding charges, and a memory gate electrode formed on …

(57) ABSTRACT A method for operating a memory device includes the steps of providing a
first voltage to a first transistor of a first memory cell and a third transistor of a second …

A method of erasing, during an erase operation, a non-volatile memory (NVM) cell of a
memory device is disclosed. The erasing includes applying a first HV signal (VPOS) to a …

Systems, methods, and apparatus are disclosed for imple menting memory cells having
common source lines. The methods may include receiving a first voltage at a first transistor …

Abstract Structure and method of fabrication of F-RAM cells are described. The F-RAM cell
include ferroelectric capacitors forming over and with a pre-patterned barrier structure which …