Advances in AFM for the electrical characterization of semiconductors

RA Oliver - Reports on Progress in Physics, 2008 - iopscience.iop.org
Atomic force microscopy (AFM) is a key tool for nanotechnology research and finds its
principal application in the determination of surface topography. However, the use of the …

Nanoscale electrical characterization of semiconducting polymer blends by conductive atomic force microscopy (C-AFM)

A Alexeev, J Loos, MM Koetse - Ultramicroscopy, 2006 - Elsevier
For the first time local electrical characteristics of a blend of two semiconducting polymers
were studied with conductive atomic force microscopy (C-AFM). The investigated mixture is …

Multiwavelength single nanowire InGaAs/InP quantum well light-emitting diodes

I Yang, Z Li, J Wong-Leung, Y Zhu, Z Li, N Gagrani… - Nano Letters, 2019 - ACS Publications
We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes
grown by metal organic chemical vapor deposition using selective area epitaxy technique …

Electrical scanning probe microscopy: Investigating the inner workings of electronic and optoelectronic devices

SB Kuntze, D Ban, EH Sargent… - Critical Reviews in …, 2005 - Taylor & Francis
Semiconductor electronic and optoelectronic devices such as transistors, lasers, modulators,
and detectors are critical to the contemporary computing and communications infrastructure …

Effect of oscillator strength and intermediate resonance on the performance of resonant phonon-based terahertz quantum cascade lasers

S Fathololoumi, E Dupont, ZR Wasilewski… - Journal of Applied …, 2013 - pubs.aip.org
We experimentally investigated the effect of oscillator strength (radiative transition
diagonality) on the performance of resonant phonon-based terahertz quantum cascade …

Electron beam induced current microscopy of silicon p–n junctions in a scanning transmission electron microscope

AP Conlan, G Moldovan, L Bruas, E Monroy… - Journal of Applied …, 2021 - pubs.aip.org
A silicon pn junction has been mapped using electron beam induced current in both a
scanning transmission electron microscope (STEM) and a conventional scanning electron …

[HTML][HTML] Direct nanoscale imaging of evolving electric field domains in quantum structures

RS Dhar, SG Razavipour, E Dupont, C Xu… - Scientific reports, 2014 - nature.com
The external performance of quantum optoelectronic devices is governed by the spatial
profiles of electrons and potentials within the active regions of these devices. For example …

Comparative study of equivalent circuit models for photoconductive antennas

OA Castañeda-Uribe, CA Criollo, S Winnerl, M Helm… - Optics …, 2018 - opg.optica.org
Comparison of equivalent circuit models (ECM) for photoconductive antennas (PCA)
represents a challenge due to the multiphysics phenomena involved during PCA operation …

Charge trapping memory device based on the Ga2O3 films as trapping and blocking layer

B Bai, H Wang, Y Li, Y Hao, B Zhang, B Wang… - Chinese …, 2019 - iopscience.iop.org
We present a new charge trapping memory (CTM) device with the Au/Ga 2 O 3/SiO 2/Si
structure, which is fabricated by using the magnetron sputtering, high-temperature …

Mapping Charge Recombination and the Effect of Point-Defect Insertion in Nanowire Heterojunctions

BT Zutter, H Kim, WA Hubbard, D Ren… - Physical Review …, 2021 - APS
Electronic devices are extremely sensitive to defects in their constituent semiconductors, but
locating electronic point defects in bulk semiconductors has previously been impossible …