Scanning voltage microscopy (SVM) is employed to measure the voltage division—and
resulting contact resistance and power loss—at the p‐In 0.53 Ga 0.47 As–p‐InP …

Electronic devices are extremely sensitive to defects in their constituent semiconductors, but
locating electronic point defects in bulk semiconductors has previously been impossible …

Surface photovoltage (SPV) was visualized over the interface of a GaAs p–n junction using
light modulated scanning tunneling spectroscopy. Spatially resolved SPV includes …

Cross-sectional scanning tunneling microscopy and spectroscopy have been used to probe
the unreconstructed (110) surface of a commercially available buried heterostructure laser in …

Cross-sectional scanning tunneling microscopy is applied to semiconductor lasers which
are biased and producing light. Two device structures are investigated—a double quantum …

Scanning spreading resistance microscopy (SSRM) with its high spatial resolution and high
dynamic signal range is a powerful tool for two-dimensional characterization of …

High-brightness light-emitting diodes (LED) based on AlGaInP combines the possibility to
achieve high efficiency with the flexibility of tuning the emission wavelength over a large …

The external performance of quantum optoelectronic devices is governed by the three-
dimensional profiles of electric potentials determined by the distribution of charge carriers …

Two-dimensional (2D) dopant profiling of the active region of THz quantum cascade laser
(QCL) devices has been achieved with atomic force microscopy (AFM). Scanning spreading …

Scanning probe microscopy, including scanning spreading resistance microscopy, scanning
capacitance microscopy and scanning voltage microscopy (SVM), is a novel and enabling …