Advanced Interconnects: Materials, Processing, and Reliability Page 1 ECS Journal of Solid State
Science and Technology, 4 (1) Y1-Y4 (2015) Y1 JSS Focus Issue ON Advanced Interconnects …

The continuous scaling needed for better performance and higher density has introduced
some new challenges to the back end of line (BEOL) in terms of layout and design …

Atomic layer deposition of ruthenium is studied as a barrierless metallization solution for
future sub-10 nm interconnect technology nodes. We demonstrate the void-free filling in sub …

This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

Critical properties of porous periodic mesoporous silica (PMO) low-k dielectric with a
different ratio of benzene bridges and methyl terminal groups are studied by using various …

Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

Reducing the delay of backend interconnects is critical in delivering improved performance
in next generation computer chips. One option is to implement interlayer dielectric (ILD) …

The effects of the annealing temperature on the structures and quantities of silicon dioxide
obtained from rice husk by means of thermal treatment followed by acid leaching were …

Ruthenium is one of the most promising candidates to replace tantalum and titanium based
diffusion barrier layers in microelectronics. Its unique properties allow the deposition of …

Advances in interface science over the last 20 years have demonstrated the use of
molecular nanolayers (MNLs) at inorganic interfaces to access emergent phenomena and …