Ion migration as well as electron transfer and coupling in resistive switching materials
endow memristors with a physically tunable conductance to resemble synapses, neurons …

Metal oxide resistive switching memories have been a crucial component for the
requirements of the Internet of Things, which demands ultra‐low power and high‐density …

Modern computation based on von Neumann architecture is now a mature cutting-edge
science. In the von Neumann architecture, processing and memory units are implemented …

This article provides a review of current development and challenges in brain-inspired
computing with memristors. We review the mechanisms of various memristive devices that …

As human society enters the big data era, huge data storage and energy‐efficient data
processing are in great demand. The resistive switching device is an emerging device with …

Metal halide perovskite materials have shown versatile functionality for a variety of
optoelectronic devices. Remarkable progress in device performance has been achieved for …

Abstract We developed W/HfO 2/TiN vertical resistive random-access memory (VRRAM) for
neuromorphic computing. First, basic electrical properties, such as current–voltage curves …

Emerging nanoionic memristive devices are considered as the memory technology of the
future and have been winning a great deal of attention due to their ability to perform fast and …

Quantum effects in novel functional materials and new device concepts represent a potential
breakthrough for the development of new information processing technologies based on …

Semiconductor memories are essential ingredients of modern electronic devices. Resistive
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …