Laser-assisted interface engineering for functional interfacial layer of Al/ZnO/Al resistive random access memory (RRAM)
In oxide-based RRAMs using reactive electrodes such as Al, the properties of
spontaneously formed interfacial layers are critical factors in determining the resistive …
spontaneously formed interfacial layers are critical factors in determining the resistive …
[HTML][HTML] Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristors
Resistive random access memories (RRAMs) are considered as key enabling components
for a variety of emerging applications due to their capacity to support multiple resistive …
for a variety of emerging applications due to their capacity to support multiple resistive …
Gradual reset and set characteristics in yttrium oxide based resistive random access memory
This paper addresses the resistive switching behavior in yttrium oxide based resistive
random access memory (RRAM)(TiN/yttrium oxide/Pt) devices. We report the coexistence of …
random access memory (RRAM)(TiN/yttrium oxide/Pt) devices. We report the coexistence of …
Tuning resistive switching properties of WO3− x-memristors by oxygen vacancy engineering for neuromorphic and memory storage applications
High density memory storage capacity, in-memory computation and neuromorphic
computing utilizing memristors are expected to solve the limitation of von-Neumann …
computing utilizing memristors are expected to solve the limitation of von-Neumann …
Electrical characteristics of interfacial barriers at metal—TiO2 contacts
The electrical properties of thin TiO 2 films have recently been extensively exploited with the
aim of enabling a variety of metal-oxide electron devices: unipolar and bipolar …
aim of enabling a variety of metal-oxide electron devices: unipolar and bipolar …
Self-Limited and Forming-Free CBRAM Device With Double Al2O3 ALD Layers
Self-limited and forming-free Cu-based CBRAM devices with a double Al 2 O 3 atomic layer
deposition layer (D-ALD) structure were developed. The proposed structure offers desirable …
deposition layer (D-ALD) structure were developed. The proposed structure offers desirable …
Highly reliable multilevel resistive switching in a nanoparticulated In2O3 thin-film memristive device
KK Pawar, DV Desai, SM Bodake… - Journal of Physics D …, 2019 - iopscience.iop.org
The present report deals with the development of a cost-effective, solution-processable and
nanoparticulated In 2 O 3 thin-film memristive device for application in multilevel resistive …
nanoparticulated In 2 O 3 thin-film memristive device for application in multilevel resistive …
Ultralow switching voltage and power consumption of GeS2 thin film resistive switching memory
N Lyapunov, CH Suen, CM Wong, X Tang… - Journal of Advanced …, 2021 - World Scientific
The coming Big Data Era requires progress in storage and computing technologies. As an
emerging memory technology, Resistive RAM (RRAM) has shown its potential in the next …
emerging memory technology, Resistive RAM (RRAM) has shown its potential in the next …
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive …
The effect of TiW metal barrier layer thickness on voltage-current characteristics of the
Cu/TiW/ZrO 2/TiN conductive bridge random access memory device was systematically …
Cu/TiW/ZrO 2/TiN conductive bridge random access memory device was systematically …
A modification of Chao's lower bound estimator in the case of one-inflation
D Böhning, P Kaskasamkul, PGM van der Heijden - Metrika, 2019 - Springer
For zero-truncated count data, as they typically arise in capture-recapture modelling, the
nonparametric lower bound estimator of Chao is a frequently used estimator of population …
nonparametric lower bound estimator of Chao is a frequently used estimator of population …