Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
GaAsBi: from molecular beam epitaxy growth to devices
RD Richards, NJ Bailey, Y Liu… - … status solidi (b), 2022 - Wiley Online Library
GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
Electrical injection Ga (AsBi)/(AlGa) As single quantum well laser
P Ludewig, N Knaub, N Hossain, S Reinhard… - Applied Physics …, 2013 - pubs.aip.org
The Ga (AsBi) material system opens opportunities in the field of high efficiency infrared
laser diodes. We report on the growth, structural investigations, and lasing properties of …
laser diodes. We report on the growth, structural investigations, and lasing properties of …
Progress toward III–V bismide alloys for near-and midinfrared laser diodes
IP Marko, SJ Sweeney - IEEE Journal of Selected Topics in …, 2017 - ieeexplore.ieee.org
Bismuth-containing III-V alloys open-up a range of possibilities for practical applications in
semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of …
semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of …
[图书][B] Bismuth-containing alloys and nanostructures
S Wang, P Lu - 2019 - Springer
Bismuth (Bi), discovered in 1753, is the heaviest non-radioactive element in the periodic
table. The interest in using Bi in solid-state devices in early days was mainly focused on …
table. The interest in using Bi in solid-state devices in early days was mainly focused on …
Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell
Multi-junction solar cells achieve high efficiency by stacking sub-cells of different bandgaps
(typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be …
(typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be …
Impact of alloy disorder on the band structure of compressively strained GaBiAs
The incorporation of bismuth (Bi) in GaAs results in a large reduction of the band gap energy
(E g) accompanied with a large increase in the spin-orbit splitting energy (△ SO), leading to …
(E g) accompanied with a large increase in the spin-orbit splitting energy (△ SO), leading to …
Physical properties and optimization of GaBiAs/(Al) GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi
IP Marko, P Ludewig, ZL Bushell, SR Jin… - Journal of Physics D …, 2014 - iopscience.iop.org
This paper reports on progress in the development of GaAsBi/(Al) GaAs based lasers grown
using metal-organic vapour phase epitaxy and focuses on the underlying processes …
using metal-organic vapour phase epitaxy and focuses on the underlying processes …
GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique
Abstract We report a GaAs 0.96 Bi 0.04/GaAs multiple quantum well (MQW) light emitting
diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) …
diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) …
Theoretical and experimental studies of electronic band structure for GaSb1− xBix in the dilute Bi regime
Photoreflectance (PR) spectroscopy was applied to study the band gap in GaSb 1− x Bi x
alloys with Bi< 5%. Obtained results have been interpreted in the context of ab initio …
alloys with Bi< 5%. Obtained results have been interpreted in the context of ab initio …