Entangled photon pairs are an important resource for many types of quantum protocols.
Semiconductor Bragg-reflection waveguides are a promising photon-pair source due to …

Periodic pillars of semiconductor in sub-wavelength size can serve multiple roles as
diffracting, trapping and absorbing light for effective photoelectric conversion which has …

We investigate the parameter optimization for micron-scale etching by Inductive Coupled
Plasma-Deep Reactive Ion Etching (ICP-DRIE) of GaAs/AlGaAs semiconductor …

Provided herein are ALE methods of removing III-V materials such as gallium nitride (GaN)
and related apparatus. In some embodiments, the methods involve exposing the III-V …

We report an investigation into the formation of crystallographic voids during the
metalorganic vapour phase epitaxial regrowth of GaAs photonic crystal structures. We …

Growing demand for efficient, high-resolution surface processing has led to the emergence
of a rich variety of plasma-based technologies underpinned by an equally wide range of …

Methods for evaluating synergy of modification and removal operations for a wide variety of
materials to determine process conditions for self-limiting etching by atomic layer etching are …

We have experimentally demonstrated broadband tuneable four-wave mixing in AlGaAs
nanowires with the widths ranging between 400 and 650 nm and lengths from 0 to 2 mm …

Vertical III–V nanowires are of great interest for a large number of applications, but their
integration still suffers from manufacturing difficulties of these one-dimensional …

We review our recent progress on frequency conversion in integrated devices, focusing
primarily on experiments based on strip-loaded and quantum-well intermixed AlGaAs …