A Cl 2-HBr-O 2/Ar inductively coupled plasma (ICP) etching process has been adapted for
the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool …

A dry etching process to transfer the pattern of a photonic integrated circuit design for high-
speed laser communications is described. The laser stack under consideration is a 3.2-µm …

The authors report on the fabrication of GaAs nanopillars with different profiles/topologies
using colloidal lithography and dry etching. GaAs nanopillars with different shapes and …

Indium Phosphide (InP) is one of the most widely commercialized III–V semiconductor
materials for making efficient lasers operating in the O-band and C-band. It is also gaining …

Тенденции развития современной технологии электронной техники заключаются в
увеличении степени интеграции изделий на поверхности подложек, что связано как с …

In this paper, we investigate semiconductor nanowaveguides (ie ridge waveguides with core-
widths narrower than 1 μm) intended to act as novel optical light sources through nonlinear …

This doctoral dissertation focuses on fabrication processes for integrated photonic devices
based on III-V semiconductors. This work covers a range of III-V materials and a variety of …

We investigate inductively coupled plasma (ICP) deep dry etching of Al 0.8 Ga 0.2 As for
photonic crystal (PC) fabrication using a Cl 2/BCl 3/CH 4 gas mixture. On the basis of our …

In this paper, we introduce a quantum photonic device, which we term the photonic Bier-
Glas cavity. We discuss its fabrication and functionality, which is based on the coupling of …

We reported a method combining the gas–liquid interface method and inductively coupled
plasma (ICP) to fabricate highly-ordered nanowire arrays on a 2 inch GaAs substrate. A …