Thermal Dynamic Imaging and Thermal Management for Quantum Cascade Lasers

S Wang - 2022 - uwspace.uwaterloo.ca
Recent advances in quantum cascade lasers (QCLs) development are pushing lasing
performance towards higher output power, higher operating temperature, and higher wall …

GaAs 基VCSEL 干法刻蚀技术研究综述

范昊轩, 张文博, 李沐泽, 郝永芹 - INFRARED, 2023 - journal.sitp.ac.cn
GaAs 基垂直腔面发射激光器(Vertical-Cavity Surface-Emitting Laser, VCSEL) 自1977
年问世以来, 凭借阈值电流较低, 光束质量很高, 可集成到二维阵列, 易单模激射等优势被广泛 …

5-axis CNC micro-milling machine for three-dimensional microfluidics

M Modarelli, D Kot-Thompson, K Hoshino - bioRxiv, 2024 - biorxiv.org
The gold standard of microfluidic fabrication techniques, SU-8 patterning, requires
photolithography equipment and facilities and is not suitable for 3D microfluidics. A 3D …

High aspect ratio germanium nanowires obtained by dry etching

K Guilloy, N Pauc, A Gassenq, V Calvo - MRS Advances, 2016 - Springer
We present here a reactive ion etching recipe to fabricate germanium nanowires. We used a
combination of Cl 2, N 2 and O 2 and studied the influence of both the gas pressure and the …

Highly selective GaAs/AlGaAs dry etching using HBr/SF6/He

M Barrow, S Wright, S Puzycki, P Shah… - Journal of Vacuum …, 2021 - pubs.aip.org
Selective etching of GaAs is critical for many applications, including flat optical components
and high electron mobility transistors. It is long-known that F-containing process gases …

Ultra-small near-infrared multi-wavelength light source using a heterojunction photonic crystal waveguide and self-assembled InAs quantum dots

S Uchida, N Ozaki, T Nakahama, H Oda… - Japanese Journal of …, 2017 - iopscience.iop.org
We herein propose and verify an ultra-small near-infrared (NIR) multi-wavelength light
source using a heterojunction photonic crystal waveguide (PC-WG) and quantum dots …

[引用][C] GaAs/AlGaAs 多层膜刻蚀的陡直度

罗跃川, 韩尚君, 王雪敏, 吴卫东, 唐永建 - 信息与电子工程, 2011

Inductively coupled plasma etching of high aspect ratio two-dimensional photonic crystals in Al-rich AlGaAs and AlGaAsSb

A Larrue, D Belharet, P Dubreuil, S Bonnefont… - Journal of Vacuum …, 2011 - pubs.aip.org
Planar two-dimensional photonic crystals are key tools for the development of advanced
optoelectronic devices. However, their practical realization often requires deep etching of air …

Towards a Vertical and Damage Free Post-Etch InGaAs Fin Profile: Dry Etch Processing, Sidewall Damage Assessment and Mitigation Options

U Peralagu, X Li, O Ignatova, YC Fu, DAJ Millar… - ECS …, 2015 - iopscience.iop.org
Based on current projections, III-Vs are expected to replace Si as the n-channel solution in
FinFETs at the 7nm technology node. The realisation of III-V FinFETs entails top-down …

[PDF][PDF] Electrostatic exciton trap in a thin semiconductor membrane for optical coupling to a GaAs spin qubit

TDM Descamps - scholar.archive.org
Interfacing stationary matter qubits with flying photonic qubits is of major interest in quantum
computing and quantum communication technology as it is a necessary requirement to …