We present an inductively coupled-plasma reactive-ion etching process that simultaneously
provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in …

Gallium-based III-V semiconductors such as GaAs are widely used in light-emitting diode
(LED), wireless, and laser diode devices. Thin GaAs devices have increased performance …

The work presented in this thesis deals with the design, fabrication and characterization of
sources intended to function as both laser diodes and optical parametric oscillators. These …

In this dissertation I present advances in the studies of artificial lattices with honeycomb
topology, called artificial graphene (AG), in nano-patterned GaAs quantum wells (QWs). AG …

The nitrogen-vacancy (NV) center is a point defect in the diamond crystal lattice, forming a
localized-electron system with unique optical and spin properties. In particular, optical …

When nature is observed at the nanoscale, quantum physics is typically the most accurate
model to describe and predict its behavior. Furthermore, quantum effects are increasingly at …

W pracy przedstawiono opis wybranych zjawisk nieliniowych drugiego i trzeciego rzędu, w
których wykorzystywana jest zarówno specyfika struktur falowodowych wykonanych z …

In this paper, we demonstrate a new method of fabricating large-area well-ordered nano-
cones using colloidal lithography and inductively coupled plasma (ICP) dry etching, and …

The theoretical understanding of Photonic Crystal (PhC) structure and its potential
application areas have been known for a long time. Its usage in developing functional …

L'amélioration des performances des détecteurs (au niveau de la résolution en énergie et
de la résolution spatiale) pour la radiographie X médicale par l'utilisation d'un semi …