An overview of the development of a GPU with integrated HBM on silicon interposer

CC Lee, CP Hung, C Cheung, PF Yang… - 2016 IEEE 66th …, 2016 - ieeexplore.ieee.org
In recent years, the 2.5 D IC (Integrated Circuit) package with TSV (Through Silicon Vias)
has become important for high-bandwidth and high-performance applications. It is well …

[图书][B] Metrology and Diagnostic Techniques for Nanoelectronics

Z Ma, DG Seiler - 2017 - taylorfrancis.com
Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

Prediction of deformation during manufacturing processes of silicon interposer package with TSVs

Y Kim, AY Park, CL Kao, M Su, B Black… - Microelectronics Reliability, 2016 - Elsevier
The purpose of this paper is to analyze and predict the thermal deformation of the through
silicon via (TSV) interposer package during the manufacturing process and to perform a …

Chip–Package Interaction and Reliability Improvement by Structure Optimization for Ultralow- Interconnects in Flip-Chip Packages

X Zhang, Y Wang, JH Im, PS Ho - IEEE Transactions on Device …, 2012 - ieeexplore.ieee.org
Mechanical failures in low-k interlayer dielectrics and related interfaces during flip-chip-
packaging processes have raised serious reliability concerns. The problem can be traced to …

Study of chip–package interaction parameters on interlayer dielectric crack propagation

S Raghavan, I Schmadlak, G Leal… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
To meet the electrical performance requirements, copper traces with ultralow-k (ULK)
interlayer dielectric (ILD) materials are used in today's semiconductor devices. The dielectric …

[HTML][HTML] An Investigation on the Most Likely Failure Locations in the BEoL Stack of a 20 nm Chip Due to Chip Package Interaction with the Use of Novel Semi-Elliptical …

G Li, Y Shi, AAO Tay, Z Long - Micromachines, 2023 - mdpi.com
The era of 20 nm integrated circuits has arrived. There exist abundant heterogeneous
micro/nano structures, with thicknesses ranging from hundreds of nanometers to sub …

The stress analysis and parametric studies for the low-k layers of a chip in the flip-chip process

L Lin, J Wang, L Wang, W Zhang - Microelectronics Reliability, 2016 - Elsevier
Using low-k/ultralow-k (LK/ULK) materials as the inter-layer dielectrics (ILD) and inter-metal
dielectrics (IMD) in copper connections were implemented to meet the electrical …

Chip‐Packaging Interaction and Reliability Impact on Cu/Low k Interconnects

G Wang, X Zhang, PS Ho - AIP Conference Proceedings, 2006 - pubs.aip.org
The packaging process can increase the driving force for interfacial delamination and
significantly impacts the reliability of the low k chip. In this study we investigated the …

Differential heating/cooling chip joining method to prevent chip package interaction issue in large die with ultra low-k technology

K Sakuma, K Smith, K Tunga, E Perfecto… - 2012 IEEE 62nd …, 2012 - ieeexplore.ieee.org
A differential heating/cooling chip join method was developed for Pb-free flip chip packaging
of ultra low-k (ULK) technology Si chips on organic substrates to prevent Chip-Package …

Design guideline on board-level thermomechanical reliability of 2.5 D package

S Shao, Y Niu, J Wang, R Liu, S Park, H Lee… - Microelectronics …, 2020 - Elsevier
A vast range of electronics products have utilized 2.5 D packages for better performance and
miniaturization. As multi-level assembly technologies are getting mature, 2.5 D packaging …