Impact of interface traps and noise analysis on dual material graded channel CGAA FET: A device reliability
PK Mudidhe, BR Nistala - Micro and Nanostructures, 2024 - Elsevier
This paper explores the effects of changing the device's parameters, such as the gate length
(L g), nanowire radius (r), oxide thickness (t ox), and frequency (f), on the noise …
(L g), nanowire radius (r), oxide thickness (t ox), and frequency (f), on the noise …