Y Zhu, Y Zhang, B Li, GM Xia, RT Wen - Electrochimica Acta, 2024 - Elsevier
Abstract Epitaxial Ge-on-Si possesses a high density of threading dislocations (TDs) due to the lattice mismatch and difference in thermal expansion coefficient. By employing the lattice …
In this paper, hexagonal germanium dioxide (GeO 2) nanostructures with different morphologies and sizes were successfully synthesized by a simple and fast …
YA Bioud, M Rondeau, A Boucherif… - arXiv preprint arXiv …, 2021 - arxiv.org
A predictive model for the evolution of porous Ge layer upon thermal treatment is reported. We represent an idealized etched dislocation core as an axially symmetric elongated hole …