Effect of strain and stacking on electronic structure, optical and photocatalytic performance of monolayer XO2 (X = Ti, Ni and Ge)

S Riaz, M Gul, F Khan, I Ahmad, M Ilyas - Applied Physics A, 2023 - Springer
In this theoretical study we investigate the electronic, optical, and photocatalytic properties of
monolayer titanium dioxide (TiO2), nickel dioxide (NiO2), and germanium dioxide (GeO2) …

Fabrication of penetrating pores in epitaxial Ge-on-Si through preferential etching along threading dislocations

Y Zhu, Y Zhang, B Li, GM Xia, RT Wen - Electrochimica Acta, 2024 - Elsevier
Abstract Epitaxial Ge-on-Si possesses a high density of threading dislocations (TDs) due to
the lattice mismatch and difference in thermal expansion coefficient. By employing the lattice …

[HTML][HTML] Shape control of cathodized germanium oxide nanoparticles

YA Bioud, E Paradis, A Boucherif, D Drouin… - Electrochemistry …, 2021 - Elsevier
In this paper, hexagonal germanium dioxide (GeO 2) nanostructures with different
morphologies and sizes were successfully synthesized by a simple and fast …

Dynamic formation of spherical voids crossing linear defects

YA Bioud, M Rondeau, A Boucherif… - arXiv preprint arXiv …, 2021 - arxiv.org
A predictive model for the evolution of porous Ge layer upon thermal treatment is reported.
We represent an idealized etched dislocation core as an axially symmetric elongated hole …