In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

A cornerstone in the successful application of semiconductor nanowire devices is controlled
impurity doping. In this review article, we discuss the key results in the field of semiconductor …

Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …

p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic
devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type …

In this article, we provide an overview on the recent advances made in InN, including both
planar and nanowire structures. With the improved epitaxial growth process, the background …

For Raman-based carrier concentration determination in thin film semiconductors, above-
band-gap excitation is necessary, as the interference from underlying substrate is eliminated …

GaAs 0.51 Sb 0.49 is lattice-matched to InP and finds electron transport applications in base
or absorber layers in high-speed heterostructure bipolar transistors or photodiodes, because …

The carrier concentration in as-grown ensembles of n-type GaN nanowires was determined
by Raman spectroscopy of the coupled longitudinal phonon–plasmon (LPP+) mode and …

We use Raman scattering to investigate the composition behavior of the E 2h and A 1 (LO)
phonons of In x Ga 1− x N and to evaluate the role of lateral compositional fluctuations and …

Three-dimensional III-nitride micro-structures are being developed as a promising candidate
for the future opto-electrical devices. In this study, we demonstrate a quick and straight …