The quaternary alloys InGaAsP, matched in their lattice constant to InP, are considered in
view of optical-waveguide applications. The parameters, most important in this connexion …

3 Diffusion in compound semiconductors, pp. 1-63 Page 1 Ref. p. 3-70] 3 Diffusion in compound
semiconductors Landolt-B{rnstein New Series III/33A 3-1 3 Diffusion in compound …

Double Zinc Diffusion Fronts in InP: Correlation with Models of Varying Charge Transfer
during Interstitial-Substitutional Interchange - IOPscience Skip to content IOP Science home …

Диффузия в гетероэпитаксиальные структуры n-InP/n-In0. 53Ga0. 47As/n+-InP является
одной из ключевых операций для формирования p–n-перехода при изготовлении …

Abstract Zn-diffusion from SiO 2: Zn spin-on films into n-InGaAs for the preparation of pn
junctions has been investigated. The measured pn junction depths versus diffusion time are …

A new source of cadmium diffusion in In0. 53Ga0. 47As has been developed. Langmuir–
Blodgett (LB) deposited monolayers of cadmium arachidate have been used as a source of …

77 Прикладная физика, 2013, № 6 т. е. поверхность становится нестехиометричной. В
InP n-типа увеличивается концентрация акцепторов, которыми являются вакансии …

Abstract High-purity In 0.53 Ga 0.47 As lattice matched to InP was grown by liquid-phase
epitaxy and used for the study of Cu-related defects. The samples had a free-electron carrier …

A new method of analysis is developed for solving the problem of an initially thin source of
impurity ions diffusing into a host solid when the mechanism of transport involves a …

Cadmium was diffused into InP and InGaAs using Cd 3 P 2+ P or Cd 3 P 2+ Cd 3 As 2 as the
diffusion sources. Two diffusion fronts were observed. The diffusion characteristics for Cd 3 …