A review of hybrid supply modulators in CMOS technologies for envelope tracking PAs
S Bhardwaj, S Moallemi… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This article reviews trends, architectures, and recent developments in CMOS-based supply
modulators (SM) used for envelope-tracking power amplifiers (ET-PAs). This review details …
modulators (SM) used for envelope-tracking power amplifiers (ET-PAs). This review details …
A State-of-the-Art Review on CMOS Radio Frequency Power Amplifiers for Wireless Communication Systems
Wireless communication systems have undergone significant development in recent years,
particularly with the transition from fourth generation (4G) to fifth generation (5G). As the …
particularly with the transition from fourth generation (4G) to fifth generation (5G). As the …
A 60-GHz dual-mode class AB power amplifier in 40-nm CMOS
D Zhao, P Reynaert - IEEE Journal of Solid-State Circuits, 2013 - ieeexplore.ieee.org
A 60-GHz dual-mode power amplifier (PA) is implemented in 40-nm bulk CMOS technology.
To boost the amplifier performance at millimeter-wave (mmWave) frequencies, a new …
To boost the amplifier performance at millimeter-wave (mmWave) frequencies, a new …
Transformer-based uneven Doherty power amplifier in 90 nm CMOS for WLAN applications
E Kaymaksut, P Reynaert - IEEE Journal of Solid-State Circuits, 2012 - ieeexplore.ieee.org
This paper presents a fully integrated transformer-based Doherty power amplifier in a
standard 90 nm CMOS process. A novel asymmetrical series combining transformer is used …
standard 90 nm CMOS process. A novel asymmetrical series combining transformer is used …
An efficient mixed-signal 2.4-GHz polar power amplifier in 65-nm CMOS technology
A 65-nm digitally modulated polar transmitter incorporates a fully integrated, efficient 2.4-
GHz switching Inverse Class-D power amplifier. Low-power digital filtering on the amplitude …
GHz switching Inverse Class-D power amplifier. Low-power digital filtering on the amplitude …
High-power high-efficiency class-E-like stacked mmWave PAs in SOI and bulk CMOS: Theory and implementation
A Chakrabarti, H Krishnaswamy - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
<? Pub Dtl=""?> Series stacking of multiple devices is a promising technique that can help
overcome some of the fundamental limitations of CMOS technology in order to improve the …
overcome some of the fundamental limitations of CMOS technology in order to improve the …
Design of CMOS power amplifiers
AM Niknejad, D Chowdhury… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
This paper describes the key technology and circuit design issues facing the design of an
efficient linear RF CMOS power amplifier for modern communication standards …
efficient linear RF CMOS power amplifier for modern communication standards …
Design considerations for a direct digitally modulated WLAN transmitter with integrated phase path and dynamic impedance modulation
A 65-nm digitally modulated polar TX for WLAN 802.11 g is fully integrated along with
baseband digital filtering. The TX employs dynamic impedance modulation to improve …
baseband digital filtering. The TX employs dynamic impedance modulation to improve …
A broadband mixed-signal CMOS power amplifier with a hybrid class-G Doherty efficiency enhancement technique
This paper presents a broadband mixed-signal CMOS power amplifier (PA) with a hybrid
Class-G Doherty architecture for PA efficiency enhancement up to the deep power back-off …
Class-G Doherty architecture for PA efficiency enhancement up to the deep power back-off …
Integrated bias circuits of RF CMOS cascode power amplifier for linearity enhancement
B Koo, Y Na, S Hong - IEEE Transactions on Microwave Theory …, 2012 - ieeexplore.ieee.org
This paper presents a highly linear differential cascode CMOS power amplifier (PA) with
gate bias circuits in Common Source (CS) and Common Gate (CG) amplifiers. The proposed …
gate bias circuits in Common Source (CS) and Common Gate (CG) amplifiers. The proposed …