The optical constants of InGaAs were determined as a function of electron concentration in
the range from 10 15 to 2× 10 19 cm− 3 by reflectance-and transmission-spectroscopy. A …

InAlAs: Be/InGaAs superlattices grown at low temperatures were investigated in this study.
To obtain the highest resistivity and mobility simultaneously, a growth temperature above …

The optimization of thermophotovoltaic (TPV) cell efficiency is essential since it leads to a
significant increase in the output power. Typically, the optimization of In0. 53Ga0. 47As TPV …

We introduce new micron-gap thermophotovoltaic systems enhanced by tungsten
nanowires. We theoretically show that these systems allow the frequency-selective super …

The hetero-interfaces of an InGaAs/GaAsSb tunnel junction, embedded into two InP barrier
layers, as used in a tandem solar cell, were studied. With regard to the sharpness of these …

The electron energy band alignment at interfaces of In x Ga 1− x As (0≤ x≤ 0.53) with
atomic-layer deposited insulators Al 2 O 3 and HfO 2 is characterized using internal …

The compound In0. 53Ga0. 47As lattice matched to InP is of interest from both applied and
fundamental perspectives. Structures based on In0. 53Ga0. 47As materials have been used …

We discuss wavelength tuning and its corresponding quantum efficiency modulated by the
standing wave effects in a resonant-cavity enhanced (RCE) photodetector. Specific design …

BACKGROUND The detection of traces of explosive materials is of utmost importance at the
present time due to the ongoing risk of terrorism. Detection devices should identify …

InxGa1− xAs epitaxial layers with different AsH3 flows have been grown on InP substrate
with the MOVPE system. It has been found that AsH3 flow variation affects the In …