Silicon-integrated monocrystalline oxide–nitride heterostructures for deep-ultraviolet optoelectronics
New opportunities for high-performance CMOS-compatible optoelectronic devices have
accelerated the interest in vertically configured device topologies that enable next …
accelerated the interest in vertically configured device topologies that enable next …
Epitaxial growth of [beta]-Ga2O3/[epsilon]-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics
Thin polymorphic gallium oxide films were grown on c-plane sapphire using pulsed laser
deposition. The stacked thin films (ε-G a2 O 3 and β-G a2 O 3) were sequentially grown …
deposition. The stacked thin films (ε-G a2 O 3 and β-G a2 O 3) were sequentially grown …
Ga2O3/p-Si PN HETERO EKLEMLİ UV FOTODEDEKTÖRLERİNİN ÜRETİMİ VE KARAKTERİZASYONU
U HARMANCI - 2023 - acikerisim.harran.edu.tr
Ultra geniş bant aralıklı (Ga2O3), kimyasal ve termal kararlılığı, opto-elektronik ve güç
elektroniğinde kullanılan cihazlara yönelik çeşitli potansiyel uygulamaları nedeniyle son …
elektroniğinde kullanılan cihazlara yönelik çeşitli potansiyel uygulamaları nedeniyle son …
III-Oxide Epitaxy, Heterostructure, Material Characterizations, and Applications
KH Li - 2020 - repository.kaust.edu.sa
B-Ga2O3 is one of the emerging semiconductor materials with high breakdown field strength
(~ 8 MV/cm) and ultrawide-bandgap (UWBG) 4.9 eV. Therefore, B-Ga2O3 and related …
(~ 8 MV/cm) and ultrawide-bandgap (UWBG) 4.9 eV. Therefore, B-Ga2O3 and related …