Nanoparticles of manganese antimonate (MnSb2O6) were prepared using the microwave-
assisted colloidal method for its potential application as a gas sensor. For the synthesis of …

Electron leakage in the active region decreases the internal quantum efficiency and
impedes the performance of gallium nitride (GaN)-based vertical-cavity surface-emitting …

We present a photon-counting simulation to evaluate the impact of top cell film quality on
overall performance when designing stack tandem photovoltaic devices. We apply this …

Photoluminescence (PL) spectroscopy of nonpolar m-plane InGaN thin films with indium
composition up to 21% and nearly strain-balanced In 0.09 Ga 0.91 N/Al 0.19 Ga 0.81 N …

Temperature‐dependent continuous‐excitation and time‐resolved photoluminescence are
studied to probe carrier localization and recombination in nearly strain‐balanced m‐plane …

The narrow bandgap in InN has been known as a notorious example of local density
approximation or generalized gradient approximation (LDA or GGA) calculations to give a …

In meeting the requirements of a dissertation, the author is typically asked to publish three
first-author publications. This dissertation comprises a collection of publications as well as …

In this paper we show a proof of concept for the application of the supercontinuum light
source as a probing beam in photoreflectance (PR) and photoacoustic (PA) spectroscopies …

Nitride semiconductors are promising for applications in opto-electronic devices due to their
wide band gap that is adjustable by appropriate choice of alloy composition. To date, many …

The narrow bandgap in InN has been known as a notorious example of local density
approximation or gener-alized gradient approximation (LDA or GGA) calculations to give a …