Nano-electromechanical (NEM) relays are a promising class of emerging devices that offer
zero off-state leakage and behave like an ideal switch. Recent advances in planar …

Recent research on NEM devices for logic and memory applications has been reviewed
from the perspective of monolithic 3D (M3D) heterogeneous integration. In addition, the …

As we enter the deep submicron era, the number of transistors integrated on die is
exponentially increased. While the additional transistors largely boost the processor …

A novel design for a six-terminal nanoelectromechanical relay is presented. The design
includes a secondary beam in the signal pathway of the device, which allows direct contact …

This paper presents the first usage of hafnium diboride (HfB2) deposited via chemical vapor
deposition as the contact material for nanoelectromechanical (NEM) switches. HfB2 is an …

In this work, we design and optimize the physical and electrical properties of multipole single-
throw NEM relays for use as reconfigurable routers. Prior work has examined the use of …

Because nanoelectromechanical (NEM) memory switches generally have higher pull-in
voltage (V PI) and lower reliability than CMOS devices, reducing V PI and maximum stress …

Monolithic-3D (M3D) CMOSnanoelectromechanical (CMOS-NEM) hybrid reconfigurable
logic (RL) circuits are compared and analyzed with CMOS-only RL circuits in CMOS 130-nm …

Because nanoelectromechanical (NEM) memory switches have higher pull-in voltage
(VSUBPI/SUB) and lower reliability than CMOS devices, reducing VSUBPI/SUB and …

Electrostatically-actuated Micro-Electro-Mechanical/Nano-Electro-Mechanical (MEM/NEM)
relays are promising devices overcoming the energy-efficiency limitations of CMOS …