Atomic layer etching of tungsten for enhanced tungsten deposition fill
CS Lai, KJ Kanarik, S Tan, A Chandrashekar… - US Patent …, 2018 - Google Patents
US9972504B2 - Atomic layer etching of tungsten for enhanced tungsten deposition fill - Google
Patents US9972504B2 - Atomic layer etching of tungsten for enhanced tungsten deposition fill …
Patents US9972504B2 - Atomic layer etching of tungsten for enhanced tungsten deposition fill …
Cobalt etch back
Methods of etching cobalt on substrates are provided. Some methods involve exposing the
substrate to a boron-containing halide gas and an additive, and exposing the substrate to an …
substrate to a boron-containing halide gas and an additive, and exposing the substrate to an …
Etching substrates using ale and selective deposition
Methods of and apparatuses for processing substrates having carbon-containing material
using atomic layer deposition and selective deposition are provided. Methods involve …
using atomic layer deposition and selective deposition are provided. Methods involve …
ALE smoothness: in and outside semiconductor industry
KJ Kanarik, S Tan, T Lill, M Shen, Y Pan… - US Patent …, 2018 - Google Patents
Methods of etching and smoothening films by exposing to a halogen-containing plasma and
an inert plasma within a bias window in cycles are provided. Methods are suitable for …
an inert plasma within a bias window in cycles are provided. Methods are suitable for …
Dry plasma etch method to pattern MRAM stack
S Tan, KIM Taeseung, W Yang, J Marks… - US Patent 9,806,252, 2017 - Google Patents
Methods of etching metal by depositing a material reactive with a metal to be etched and a
halogen to form a volatile species and exposing the substrate to a halogen-containing gas …
halogen to form a volatile species and exposing the substrate to a halogen-containing gas …
Dry plasma etch method to pattern MRAM stack
S Tan, KIM Taeseung, W Yang, J Marks… - US Patent 10,374,144, 2019 - Google Patents
Methods of etching metal by depositing a material reactive with a metal to be etched and a
halogen to form a volatile species and exposing the substrate to a halogen-containing gas …
halogen to form a volatile species and exposing the substrate to a halogen-containing gas …
Atomic layer etch methods and hardware for patterning applications
Methods and apparatuses for patterning carbon-containing material over a layer to be
etched are provided herein. Methods involve trimming carbon-containing material by atomic …
etched are provided herein. Methods involve trimming carbon-containing material by atomic …
Designer atomic layer etching
KJ Kanarik - US Patent 10,566,212, 2020 - Google Patents
Methods for evaluating synergy of modification and removal operations for a wide variety of
materials to determine process conditions for self-limiting etching by atomic layer etching are …
materials to determine process conditions for self-limiting etching by atomic layer etching are …
Atomic layer etch, reactive precursors and energetic sources for patterning applications
Methods and apparatuses for patterning carbon-containing material over a layer to be
etched are provided herein. Methods involve trimming carbon-containing material by atomic …
etched are provided herein. Methods involve trimming carbon-containing material by atomic …
Atomic layer etching of tungsten and other metals
W Yang, S Tan, KJ Kanarik, J Marks… - US Patent …, 2018 - Google Patents
Provided herein are methods of atomic layer etching (ALE) of metals including tungsten (W)
and cobalt (Co). The methods disclosed herein provide precise etch control down to the …
and cobalt (Co). The methods disclosed herein provide precise etch control down to the …