This paper presents a novel piezoelectric strain sensor for damping and accurate tracking
control of a high-speed nanopositioning stage. Piezoelectric sensors have the benefit of …

The optimisation of GaN-based electronic and optoelectronic devices requires control over
the doping of the material. However, device performance, particular for lateral transport …

The performance of transistors designed specifically for high-frequency applications is
critically reliant upon the semi-insulating electrical properties of the substrate. The suspected …

An atomic force microscope equipped with temperature sensitive probes was used to
measure locally the photothermal effect induced by IR light absorption. This novel instrument …

Raster scanning is common in atomic force microscopy (AFM). The nonsmooth raster
waveform contains high-frequency content that can excite mechanical resonances of an …

The scanning capacitance microscope (SCM) is a powerful tool to characterise local
electrical properties in GaN-based high electron mobility transistor (HEMT) structures with …

The tunneling current through an atomic force microscopy (AFM) tip is used to evaluate the
effective electrical contact area, which exists between tip and sample in contact-AFM …

Atomic force microscopy (AFM) has become a well-established technique for nanoscale
imaging of samples in air and in liquid. Recent studies have shown that when operated in …

Control of leakage currents in the buffer layers of GaN based transistors on Si substrates is
vital for the demonstration of high performance devices. Here, we show that the growth …

Electronic materials such as semiconductors, piezo‐and ferroelectrics, and metal oxides are
primary constituents in sensing, actuation, nanoelectronics, memory, and energy systems …