Applications of atomic force microscopy in materials, semiconductors, polymers, and medicine: A minireview

J Chen, K Xu - Instrumentation Science & Technology, 2020 - Taylor & Francis
Atomic force microscope (AFM), as a type scanning probe microscope (SPM), offers
advantages that include high resolution, real-time analysis, in-situ imaging, few …

Combined electrochemical-topographical imaging: a critical review

MA O'Connell, AJ Wain - Analytical Methods, 2015 - pubs.rsc.org
The ability to characterise electrochemical interfaces on a localised scale has revolutionised
our understanding of spatially heterogeneous surface processes. Advances in scanning …

New opportunities in crystal engineering–the role of atomic force microscopy in studies of molecular crystals

EHH Chow, DK Bučar, W Jones - Chemical Communications, 2012 - pubs.rsc.org
Here, we highlight recent research involving atomic force microscopy investigations of
molecular crystals, and focus particularly on the latest relevant advances in our knowledge …

Augmentation of thermoelectric power factor of p-type chromium nitride thin films for device applications

NAM Sabeer, PP Pradyumnan - Materials Science and Engineering: B, 2021 - Elsevier
The transformation of the n-type chromium nitride (CrN) thin films into p-type by intrinsic
point defects using reactive radio frequency magnetron sputtering is explored in this report …

Porous carbon nanosheets for oxygen reduction reaction and Zn-air batteries

SA Samad, Z Fang, P Shi, J Zhu, C Lu, Y Su… - 2D …, 2023 - iopscience.iop.org
Zn-air batteries (ZABs) are a promising source of renewable energy for portable electronic
devices and automobiles because of low-cost and high energy density. The efficiency of …

[HTML][HTML] High-throughput atomic force microscopes operating in parallel

H Sadeghian, R Herfst, B Dekker, J Winters… - Review of Scientific …, 2017 - pubs.aip.org
Atomic force microscopy (AFM) is an essential nanoinstrument technique for several
applications such as cell biology and nanoelectronics metrology and inspection. The need …

[HTML][HTML] Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges

F Oehler, T Zhu, S Rhode, MJ Kappers… - Journal of crystal …, 2013 - Elsevier
We investigated the properties of a GaN epilayer grown by metalorganic vapour phase
epitaxy on a c-plane bulk GaN substrate obtained by ammonothermal growth. X-ray …

Collocated z-axis control of a high-speed nanopositioner for video-rate atomic force microscopy

YK Yong, SOR Moheimani - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
A key hurdle to achieve video-rate atomic force microscopy (AFM) in constant-force contact
mode is the inadequate bandwidth of the vertical feedback control loop. This paper …

A comparison of reconstruction methods for undersampled atomic force microscopy images

Y Luo, SB Andersson - Nanotechnology, 2015 - iopscience.iop.org
Non-raster scanning and undersampling of atomic force microscopy (AFM) images is a
technique for improving imaging rate and reducing the amount of tip–sample interaction …

Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy

T Kaltsounis, H Haas, M Lafossas, S Torrengo… - Microelectronic …, 2023 - Elsevier
Localized epitaxy of gallium nitride (GaN) on silicon (Si) is studied, with the aim of achieving
material compatible with 1200 V vertical devices, in particular an unintentional doping level< …