Contact mode is a versatile and widely used technique for imaging samples using the
Atomic Force Microscope (AFM). When contact mode imaging is performed in constant …

Selective lateral epitaxial (SLE) semiconductor nanowires (NWs), with their perfect in-plane
epitaxial alignment, ability to form lateral complex p–n junctions in situ, and compatibility …

In this article, we present an overview and prospective of inhomogeneous thin deposits of
functional materials, which are usually unusable for applications as deposited. We show …

Lift-mode electrostatic force microscopy (EFM) is one of the most convenient imaging modes
to study the local dielectric properties of non-planar samples. Here we present the …

Nanoscale tip apexes of conducting cantilever probes are important enablers for several
conducting probe technologies that require reliable long-term operation, while preserving …

A unique and novel, 60 μm deep trench and refill process for manufacturing Si-based Super-
Junction device structures for high-voltage applications beyond 600 V is discussed on the …

Nearly four decades have passed since IBM scientists pioneered atomic force microscopy
(AFM) by merging the principles of a scanning tunneling microscope with the features of a …

Electrically active native point defects have a significant impact on the optical and electrical
properties of ZnO nanostructures. Control of defect distribution and a detailed understanding …

This paper presents a controller design to compensate the effects of time delay in a flexure-
based piezoelectric stack driven nanopositioner. The effects of the time delay in flexure …

A novel method is presented which enables the systematic analysis and design of scan
trajectories for highspeed scanning probe microscopy. The analysis is based on a family of …