Photocorrosion metrology of photoluminescence emitting GaAs/AlGaAs heterostructures

S Aithal, N Liu, JJ Dubowski - Journal of Physics D: Applied …, 2016 - iopscience.iop.org
High sensitivity of the photoluminescence (PL) effect to surface states and chemical
reactions on surfaces of PL emitting semiconductors has been attractive in monitoring photo …

Direct observation of spatial distribution of carrier localization sites in ultrathin GaN/AlN quantum wells by spreading resistance microscopy

DE Sviridov, VN Jmerik, S Rouvimov… - Applied Physics …, 2019 - pubs.aip.org
Spreading resistance microscopy (SRM) was used to study nanoscale variations in
electronic and structural properties of an ultrathin near-surface GaN/AlN quantum well (QW) …

Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy …

RC Germanicus, F Lallemand, D Chateigner… - Nano …, 2021 - iopscience.iop.org
Progressing miniaturization and the development of semiconductor integrated devices ask
for advanced characterizations of the different device components with ever-increasing …

Nanopositioning with impulsive state multiplication: A hybrid control approach

T Tuma, A Pantazi, J Lygeros… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
Nanopositioning is a key enabling technology for nanoscale science and engineering. Many
nanopositioning systems employ feedback control to guarantee precise and repeatable …

Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced

TJ O'Hanlon, T Zhu, FCP Massabuau, RA Oliver - Ultramicroscopy, 2021 - Elsevier
We have performed cross-sectional scanning capacitance microscopy (SCM),
cathodoluminescence (CL) microscopy in the scanning electron microscope (SEM) and …

Effects of laser spot positioning with optical beam deflection method on tapping mode and bimodal AFM

J Putnam, M Damircheli… - Proceedings of the …, 2020 - journals.sagepub.com
This work focuses on the importance of laser location and its effect on contact mode, tapping
mode, and bimodal AFM both theoretically and experimentally. It is found that the current …

Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy

M Rumler, M Rommel, J Erlekampf, M Azizi… - Journal of Applied …, 2012 - pubs.aip.org
In this work, the electrical characteristics of grain boundaries (GBs) in multicrystalline silicon
with and without iron contamination are analyzed by fixed voltage current maps and local I/V …

Control on a molecular scale: a perspective

R Findeisen, MA Grover, C Wagner… - 2016 American …, 2016 - ieeexplore.ieee.org
Imaging and manipulating objects down to the molecular level plays a crucial role in many
disciplines. It allows to unravel molecular phenomena, to form materials with new chemical …

An atomic force microscopy study of single-layer FeSe superconductor

N Li, Z Li, H Ding, S Ji, X Chen… - Applied Physics Express, 2013 - iopscience.iop.org
The single-layer iron selenide (FeSe) superconductor is becoming an ideal system to study
the mechanism of high-temperature superconductivity. In this work, we use atomic force …

Excited-state lifetime assay for protein detection on gold colloids− fluorophore complexes

S Freddi, L D'Alfonso, M Collini, M Caccia… - The Journal of …, 2009 - ACS Publications
The interaction of the surface plasmons of gold nanoparticles (NP) a few nanometers in size
with fluorophores can be used to engineer their fluorescence properties. This possibility can …