Surface potential, charging and local current transport of individual Ge quantum dots grown by molecular beam epitaxy

RK Singha, S Manna, R Bar, S Das, SK Ray - Applied Surface Science, 2017 - Elsevier
It is fundamentally important to understand the nanoscale electronic properties of a single
quantum dot (QD) contrary to an ensemble of QDs. Kelvin probe force microscopy (KPFM) …

A dual-stage nanopositioning approach to high-speed scanning probe microscopy

T Tuma, W Haeberle, H Rothuizen… - 2012 IEEE 51st IEEE …, 2012 - ieeexplore.ieee.org
A novel positioning concept for high-speed scanning probe microscopy is presented in
which a dual-stage nanopositioner is used for precise positioning over large areas at high …

Investigation of arrays of photosynthetically active heterostructures using conductive probe atomic force microscopy

NJ Economou, S Mubeen, SK Buratto… - Nano …, 2014 - ACS Publications
Control and optimization of optically excited charge and energy transport across solid–liquid
interfaces are essential for many applications including artificial photosynthesis …

Cross‐sectional mapping of hole concentrations as a function of copper treatment in CdTe photo‐voltaic devices

BA Korevaar, G Zorn, KC Raghavan… - Progress in …, 2015 - Wiley Online Library
The carrier density and carrier density distribution within CdTe solar cells were studied with
scanning capacitance microscopy (SCM). The CdTe solar cells were studied after every …

Single cycle and transient force measurements in dynamic atomic force microscopy

K Gadelrab, S Santos, J Font, M Chiesa - Nanoscale, 2013 - pubs.rsc.org
The monitoring of the deflection of a micro-cantilever, as the end of a sharp probe mounted
at its end, ie the tip, interacts with a surface, forms the foundation of atomic force microscopy …

[HTML][HTML] Quantitative electrostatic force measurement and characterization based on oscillation amplitude using atomic force microscopy

K Wang, Y Lu, J Cheng, X Zhu, L Ji - AIP Advances, 2020 - pubs.aip.org
Measurement of electrostatic force at the micro-/nanoscale has a great scientific value and
engineering significance. This paper develops a new determination method of electrostatic …

Large Range Atomic Force Microscopy with High Aspect Ratio Micropipette Probe for Deep Trench Imaging

H Shi, K Wang, S Tang, S Zhai, J Shi, C Su… - Small …, 2023 - Wiley Online Library
Atomic force microscopy (AFM) has been adopted in both industry and academia for high‐
fidelity, full‐profile topographic characterization. Typically, the tiny tip of the cantilever and …

Composition and conductance distributions of single GeSi quantum rings studied by conductive atomic force microscopy combined with selective chemical etching

Y Lv, J Cui, ZM Jiang, XJ Yang - Nanotechnology, 2013 - iopscience.iop.org
Atomic force microscopy imaging combined with selective chemical etching is employed to
quantitatively investigate three-dimensional (3D) composition distributions of single GeSi …

[HTML][HTML] Characterisation of InGaN by photoconductive atomic force microscopy

TFK Weatherley, FCP Massabuau, MJ Kappers… - Materials, 2018 - mdpi.com
Nanoscale structure has a large effect on the optoelectronic properties of InGaN, a material
vital for energy saving technologies such as light emitting diodes. Photoconductive atomic …

Characterization of unintentional doping in nonpolar GaN

T Zhu, CF Johnston, M Häberlen, MJ Kappers… - Journal of Applied …, 2010 - pubs.aip.org
Unintentional doping in nonpolar a-plane (11 2 0) gallium nitride (GaN) grown on r-plane (1
1 02) sapphire using a three-dimensional (3D)–two-dimensional (2D) growth method has …