A PMOS mm-wave power amplifier at 77 GHz with 90 mW output power and 24% efficiency
JA Jayamon, JF Buckwalter… - 2016 IEEE Radio …, 2016 - ieeexplore.ieee.org
In deeply scaled CMOS processes with gate lengths below 40 nm the analog performance
of NMOS and PMOS FETs are comparable. At the same time PMOS FETs can typically …
of NMOS and PMOS FETs are comparable. At the same time PMOS FETs can typically …
A V-band power amplifier with 23.7-dBm output power, 22.1% PAE, and 29.7-dB gain in 65-nm CMOS technology
This article presents a V-band three-stage power amplifier (PA) fabricated in 65-nm CMOS
technology with remarkable performances of output power, efficiency, and power gain. A …
technology with remarkable performances of output power, efficiency, and power gain. A …
A 28-/60-GHz band-switchable bidirectional amplifier for reconfigurable mm-wave transceivers
AA Nawaz, JD Albrecht… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Performance limits and design techniques for millimeter-wave amplifiers employing switches
for multiband operation are presented in this article. A bidirectional dual-band amplifier is …
for multiband operation are presented in this article. A bidirectional dual-band amplifier is …
A 60-GHz dual-vector Doherty beamformer
In this paper, we demonstrate a 60-GHz transmit beamformer implemented in 130-nm SiGe
BiCMOS technology which includes a Doherty amplifier driven by a dual-vector phase …
BiCMOS technology which includes a Doherty amplifier driven by a dual-vector phase …
Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET
In this article, we investigate the feasibility of enhancing the linearity Figures of Merit (FoMs)
by introducing pocket implant in the source/drain regions of the FDSOI MOSFET with ground …
by introducing pocket implant in the source/drain regions of the FDSOI MOSFET with ground …
An 18-dBm, 57 to 85-GHz, 4-stack FET power amplifier in 45-nm SOI CMOS
K Ning, JF Buckwalter - 2018 IEEE/MTT-S International …, 2018 - ieeexplore.ieee.org
A single stage, 4-stack FET SOI CMOS power amplifier (PA) demonstrates to the author's
knowledge the widest bandwidth covering 57 through 85 GHz for a CMOS PA while …
knowledge the widest bandwidth covering 57 through 85 GHz for a CMOS PA while …
A 31 GHz 2-Stage Reconfigurable Balanced Power Amplifier with 32.6dB Power Gain, 25.5% PAEmax and 17.9dBm Psatin 28nm FD-SOI CMOS
F Torres, M De Matos, A Cathelin… - 2018 IEEE Radio …, 2018 - ieeexplore.ieee.org
In this paper, a 31GHz reconfigurable balanced 2-stage power amplifier (PA) integrated in
28nm FD-SOI CMOS technology is demonstrated aiming for SoC implementation. Fine grain …
28nm FD-SOI CMOS technology is demonstrated aiming for SoC implementation. Fine grain …
1.29-W/mm2 23-dBm 66-GHz Power Amplifier in 55-nm SiGe BiCMOS With In-Line Coplanar Transformer Power Splitters and Combiner
This letter presents a four-way parallel-series power amplifier (PA) in 55-nm SiGe BiCMOS
with in-line coplanar transformers for output power combining, and input/interstage power …
with in-line coplanar transformers for output power combining, and input/interstage power …
A tunable ultra low power inductorless low noise amplifier exploiting body biasing of 28 nm FDSOI technology
This paper presents the design of an Ultra Low Power (ULP) inductorless Low Noise
Amplifier (LNA) based on a Common Gate (CG) architecture using the back gate control of …
Amplifier (LNA) based on a Common Gate (CG) architecture using the back gate control of …
A V-band Doherty power amplifier based on voltage combination and balance compensation Marchand balun
This paper presents a V-band Doherty power amplifier (PA) which is implemented in a
standard 65-nm CMOS technology. The voltage combination technique is used to realize the …
standard 65-nm CMOS technology. The voltage combination technique is used to realize the …