This paper presents the design of an Ultra Low Power (ULP) inductorless Low Noise
Amplifier (LNA) based on a Common Gate (CG) architecture using the back gate control of …

Generation of broadband power at mm-wave frequencies with high efficiency is challenging,
because of the low gain of CMOS devices and the trade-off between efficiency and gain …

Si and SOI CMOS technologies for millimeter wave wireless applications Page 1 Si and SOI
CMOS technologies for millimeter wave wireless applications B. Martineau, D. Belot CEA-LETI …

This paper presents an extensive comparison of two 28-nm CMOS technologies, ie,
standard and mm-wave-optimized (ie, thick metals and intermetal oxides) back-end-of-line …

In this paper, we report the noise measurements in the RF frequency range for ultrathin body
and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors. We analyze the …

A 0.13-μm SiGe BiCMOS dual-band power amplifier (PA) is developed which can be
operated at 28 GHz or 60 GHz. The PA employs an LC tank at the input to perform dual …

This letter presents the design of a 64-GHz power amplifier (PA) in a 22-nm FD-SOI CMOS
technology. Benefiting from optimized pseudodifferential cascode gain cells as well as the …

Next generation communication and sensing require enabling technologies for miniaturized
and efficient heterogeneous systems while integrating technologies ranging from silicon to …

Next generation mobile systems are expanding their spectrum to millimeter wave frequency
bands to support data rates up to multigigabits per second. The power amplifier is a critical …

This letter presents a two-stage mm-wave power amplifier (PA) in 22nm fully depleted silicon-
on-insulator (FD-SOI) technology. High output power is obtained through transistor stacking …