A V-band power amplifier with transformer combining and neutralization technique in 40-nm COMS
JK Wang, YH Lin, YH Hsiao, KS Yeh… - 2017 IEEE International …, 2017 - ieeexplore.ieee.org
A V-band transformer-base power amplifier (PA) is implemented in 40nm CMOS. It is a three-
stage PA with eight-way transformer combining at output stage. This PA uses the …
stage PA with eight-way transformer combining at output stage. This PA uses the …
A 60-GHz 20.6-dBm symmetric radial-combining wideband power amplifier with 20.3% peak PAE and 20-dB gain in 90-nm CMOS
CF Chou, CW Wu, YH Hsiao, YC Wu… - 2016 IEEE MTT-S …, 2016 - ieeexplore.ieee.org
A 60-GHz 1.2-V wideband power amplifier (PA) with a compact 4-way radial power
combiner implemented in 90-nm CMOS process is presented in this paper. The transformer …
combiner implemented in 90-nm CMOS process is presented in this paper. The transformer …
A review of recent power amplifier IC
This paper given a brief and concise discussion on latest research of RFIC power amplifier
(PA) designs, showing the frontier state-of-the-art developments, and then present our PA …
(PA) designs, showing the frontier state-of-the-art developments, and then present our PA …
An area efficient 48-62 ghz stacked power amplifier in 22nm fd-soi
This paper presents a millimeter wave power amplifier (PA) implemented in 22nm FD-SOI
technology with only 0.8 V transistors. The single stage pseudo-differential 3-level stacked …
technology with only 0.8 V transistors. The single stage pseudo-differential 3-level stacked …
An 80 GHz power amplifier with 17.4 dBm output power and 18% PAE in 22 nm FD-SOI CMOS for binary-phase modulated radars
This work presents a power amplifier operating from 75 GHz to 85 GHz and integrated with a
binary phase modulator in a 22 nm FD-SOI technology. The circuit can serve directly as a …
binary phase modulator in a 22 nm FD-SOI technology. The circuit can serve directly as a …
Compact Heterogeneous Integration for Next Generation High Frequency Scalable Array with Miniaturized and Efficient Power Delivery Network
SZ Aslam, N Ebrahimi - arXiv preprint arXiv:2111.04567, 2021 - arxiv.org
Next generation communication and sensing require enabling technologies for miniaturized
and efficient heterogeneous systems while integrating technologies ranging from silicon to …
and efficient heterogeneous systems while integrating technologies ranging from silicon to …
Review of cmos millimeter-wave radio frequency integrated circuits
H Wang - 2015 IEEE MTT-S International Microwave and RF …, 2015 - ieeexplore.ieee.org
The development of CMOS millimeter-wave (MMW) radio frequency integrated circuits
(RFICs) has been grown rapidly in the past ten years. This paper reviews the advances of …
(RFICs) has been grown rapidly in the past ten years. This paper reviews the advances of …
Opportunity of CMOS FD-SOI for RF power amplifier
B Martineau, E Mercier, P Vincent - 2017 IEEE SOI-3D …, 2017 - ieeexplore.ieee.org
This paper reports the design of a 5GHz WiFi power amplifier (PA) taking advantage of the
FD-SOI technology. Fabricated in a 28nm UTBB FD-SOI process with 1.8-V thick oxide …
FD-SOI technology. Fabricated in a 28nm UTBB FD-SOI process with 1.8-V thick oxide …
New Design Opportunities exploiting FDSOI technology for RF Power Amplifier and LNA design
To demonstrate the capacity of Fully-Depleted Silicon-On-Insulator (FDSOI) technology, this
paper presents two radio frequency designs taking benefit of the key advantages of the …
paper presents two radio frequency designs taking benefit of the key advantages of the …
Design of a Compact Power Amplifier with 18.6 dBm 60 GHz 20.5% PAE in 22 nm FD-SOI
This paper presents the design of a 60 GHz power amplifier (PA) in a 22 nm FD-SOI CMOS
technology. To improve the performance at millimeter-wave frequencies by minimizing the …
technology. To improve the performance at millimeter-wave frequencies by minimizing the …