[HTML][HTML] Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies

M Kambara, S Kawaguchi, HJ Lee… - Japanese Journal of …, 2022 - iopscience.iop.org
Low-temperature plasma-processing technologies are essential for material synthesis and
device fabrication. Not only the utilization but also the development of plasma-related …

Science challenges and research opportunities for plasma applications in microelectronics

DB Graves, CB Labelle, MJ Kushner… - Journal of Vacuum …, 2024 - pubs.aip.org
Low-temperature plasmas (LTPs) are essential to manufacturing devices in the
semiconductor industry, from creating extreme ultraviolet photons used in the most …

Modeling of microtrenching and bowing effects in nanoscale Si inductively coupled plasma etching process

Z Hu, H Shao, J Li, P Lai, W Wang, C Li… - Journal of Vacuum …, 2023 - pubs.aip.org
Plasma etching effects, such as microtrenching and bowing, negatively impact device
performance. Modeling of these effects at nanoscale is challenging, and theoretical and …

Modeling and simulation of coverage and film properties in deposition process on large-scale pattern using statistical ensemble method

N Kuboi, H Matsugai, T Tatsumi… - Japanese Journal of …, 2023 - iopscience.iop.org
This study modeled deposition processes using statistical ensemble and feature-scale voxel
methods to predict the coverage and film properties on a large-scale pattern for the first time …

Effect of time-modulation bias on polysilicon gate etching

M Morimoto, M Tanaka, K Koga… - Japanese Journal of …, 2023 - iopscience.iop.org
The etching characteristics were studied via time-modulation bias (bias pulsing) by varying
the pulsing parameters. The etch profiles were verified using polysilicon gate structures with …

Atomic layer etching in HBr/He/Ar/O2 plasmas

Q Hao, MAI Elgarhy, P Kim, SK Nam… - Journal of Vacuum …, 2024 - pubs.aip.org
Atomic layer etching of Si is reported in a radio frequency (RF) pulsed-power inductively
coupled (ICP) plasma, with periodic injections of HBr into a continuous He/Ar carrier gas …

Review and future perspective of feature scale profile modeling for high-performance semiconductor devices

N Kuboi - Journal of Micro/Nanopatterning, Materials, and …, 2023 - spiedigitallibrary.org
Modeling and simulation of feature scale profiles, including damage distributions and film
properties in dry etching (continuous wave, pulse, cycle, and atomic layer etching) and …

[HTML][HTML] Future of plasma etching for microelectronics: Challenges and opportunities

GS Oehrlein, SM Brandstadter, RL Bruce… - Journal of Vacuum …, 2024 - pubs.aip.org
Plasma etching is an essential semiconductor manufacturing technology required to enable
the current microelectronics industry. Along with lithographic patterning, thin-film formation …

[图书][B] Molecular Dynamics Simulation in Plasma Etching

Y Du - 2023 - search.proquest.com
In plasma etching for microelectronics fabrication, one of the objectives is to produce high
aspect ratio (HAR) via and trench structures. A principal contributor to the HAR feature …