We present a comprehensive model for the calcu-lation of the bandedge profile of both the
In10xGaxAsyP10y and In10x0yGaxAlyAs quantum-well systems with an arbitrary …

We present a new theory for photogenerated carrier escape rates from single quantum
wells, as a function of an applied electric field, that includes thermionic emission, direct …

This paper reports on the degradation processes of heterogeneous III-V/Silicon loop-mirrors
laser-diodes designed as the optical sources for next-generation Photonic Integrated …

The optical properties of elastically strained semiconductor heterostructures with
InGaAs/InGaAlAs quantum wells (QWs), intended for use in the formation of the active region …

I am indebted to my supervisor at the University of Porto, Dr. Antonio Pereira Leite, who took
the necessary steps for this work to be possible, for his advice and encouragement, and for …

The influence of in-situ thermal cleaning on the regrowth interface quality of 1.3-μm
wavelength AlGaInAs/InP-buried-heterostructure (BH) lasers grown by organo-metallic …

In/sub 1-x/Ga/sub x/As/sub 1-y/P/sub y/quantum-well (QW) lasers with compressive strain
and In/sub 1-xy/Ga/sub x/Al/sub y/As QW lasers with two strain types (compressively strained …

The fabrication and characteristics of advanced 1.55 µ m quantum-well GaInAlAs laser
diodes are presented. The strained layer laser structures were grown by metal organic vapor …

Разработаны и экспериментально исследованы вольт-амперные, ватт-амперные и
спектральные характеристики мощных полупроводниковых лазеров на основе …

High-power semiconductor laser systems based on 1.5–1.6 μm single-frequency distributed
feedback (DFB) lasers with a sidewall Bragg diffraction grating are developed and their …