Heterojunctions fabricated by surface activated bonding–dependence of their nanostructural and electrical characteristics on thermal process
N Shigekawa, J Liang, Y Ohno - Japanese Journal of Applied …, 2022 - iopscience.iop.org
Recent achievements in the research of heterojunctions fabricated using surface activated
bonding (SAB), one of the practically useful direct wafer bonding technologies, are …
bonding (SAB), one of the practically useful direct wafer bonding technologies, are …
Inverted lattice-matched GaInP/GaAs/GaInNAsSb triple-junction solar cells: Epitaxial lift-off thin-film devices and potential space applications
N Miyashita, Y Okada - Photovoltaics for Space, 2023 - Elsevier
High-efficiency, radiation-tolerant solar cell technology is essential for numerous space
applications. To discover new approaches to such potential solutions to the challenges of …
applications. To discover new approaches to such potential solutions to the challenges of …
Effects of post bonding annealing on GaAs//Si bonding interfaces and its application for sacrificial-layer-etching based multijunction solar cells
N Shigekawa, R Kozono, S Yoon, T Hara… - Solar Energy Materials …, 2020 - Elsevier
By using the sacrificial layer (SL) etching, GaAs substrates are separated from III–V epi
substrate//Si substrate junctions that are made by surface activated bonding (SAB) …
substrate//Si substrate junctions that are made by surface activated bonding (SAB) …
Fabrication and optical characterization of ultrathin III-V transferred heterostructures for hot-carrier absorbers
M Giteau, K Watanabe, N Miyashita… - Physics, Simulation …, 2020 - spiedigitallibrary.org
A hot-carrier solar cell (HCSC) is a high-efficiency photovoltaic concept where electrons and
holes are at a higher temperature than the lattice, allowing an additional thermoelectric …
holes are at a higher temperature than the lattice, allowing an additional thermoelectric …
Light absorption enhancement in ultra-thin layers for hot-carrier solar cells: first developments towards the experimental demonstration of an enhanced hot-carrier …
M Giteau, K Watanabe, N Miyashita… - Physics, Simulation …, 2019 - spiedigitallibrary.org
Hot-carrier solar cells (HCSC) can potentially overcome the Shockley-Queisser limit, by
having carriers at a higher temperature than the lattice. To this end, the carriers need to …
having carriers at a higher temperature than the lattice. To this end, the carriers need to …
III-V Thin-Film Solar Cells Bonded to Si Substrates via Metal Grids
T Hishida, J Liang, N Shigekawa - ECS Transactions, 2020 - iopscience.iop.org
Using surface-activated bonding technologies, we bond InGaP/GaAs double-junction (2J)
solar-cell structures invertedlygrown on GaAs substrates to metal grids formed on …
solar-cell structures invertedlygrown on GaAs substrates to metal grids formed on …
[PDF][PDF] Maxime Giteau, Kentaroh Watanabe, Naoya Miyashita
H Sodabanlu, J Goffard - Proc. of SPIE Vol - researchgate.net
Hot-carrier solar cells (HCSC) can potentially overcome the Shockley-Queisser limit, by
having carriers at a higher temperature than the lattice. To this end, the carriers need to …
having carriers at a higher temperature than the lattice. To this end, the carriers need to …
ELO 法及びSAB 法によるGaAs/Si 2 接合太陽電池の作製
小園亮， 梁剣波， 渡辺健太郎， 杉山正和… - … 学術講演会講演予稿集 …, 2019 - jstage.jst.go.jp
[はじめに] 我々は高効率・低コスト太陽電池実現を目指し, 異種材料の接合形成を可能とする表面
活性化接合法 (SAB 法) を用いて InGaP/GaAs/Si 3 接合太陽電池の研究を行っている [1]. 従来は …
活性化接合法 (SAB 法) を用いて InGaP/GaAs/Si 3 接合太陽電池の研究を行っている [1]. 従来は …