Progress in metal-organic chemical vapor deposition of high quality $\left (000\bar {1}\right)
$ N-polar (Al, Ga, In) N films on sapphire, silicon carbide and silicon substrates is reviewed …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

Two-dimensional materials (2DMs) with excellent mechanical, thermal, optical, and catalytic
properties have attracted a great deal of attention in recent years. Chemical vapor …

This introductory chapter provides a brief survey on the development of epitaxial growth
techniques and points out tasks for the epitaxy of device structures. Starting from early …

Over the last three decades low-dimensional systems have attracted increasing interest both
from the fundamental and technological points of view due to their unique physical and …

Abstract β gallium oxide (β-Ga 2 O 3) homoepitaxy films were grown on (2‾ 01) β-Ga 2 O 3
substrates by metal organic chemical vapor deposition (MOCVD). The effect of growth …

Homoepitaxy on vicinal surfaces may proceed by either step-flow or step-bunching growth.
This surface morphology transition is correlated with the inverse Ehrlich-Schwoebel barrier …

A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective
epitaxy is presented. The variation in axial growth rate of InAs nanowires inside oxide …

We describe in more detail a novel InP-based comb generator for optical orthogonal
frequency division multiplexed (OFDM) transmission. The device integrates a Mach …

InGaAs is a potential candidate for Si replacement in upcoming advanced technological
nodes because of its excellent electron transport properties and relatively low interface …