Structural and optical properties of InP1-xSbx/n-InAs epilayers grown by gas source molecular beam epitaxy
High-resolution x-ray diffraction (HR-XRD), photoluminescence (PL), synchrotron radiation
extended x-ray absorption fine-structure (SR-EXAFS) measurements are methodically …
extended x-ray absorption fine-structure (SR-EXAFS) measurements are methodically …
Systematic Assessment of Phonon and Optical Characteristics for Gas-Source Molecular Beam Epitaxy-Grown InP1−xSbx/n-InAs Epifilms
Experimental and theoretical assessments of phonon and optical characteristics are
methodically accomplished for comprehending the vibrational, structural, and electronic …
methodically accomplished for comprehending the vibrational, structural, and electronic …
The initial stage of LPE growth of InGaAsP on GaAs in the region of immiscibility
S Tanaka, K Hiramatsu, Y Habu, N Sawaki… - Journal of Crystal …, 1986 - Elsevier
The LPE growth process during the initial growth stage in the immiscible region of In x Ga 1−
x As y P 1− y layers lattice-matched to GaAs was studied for several solid compositions as a …
x As y P 1− y layers lattice-matched to GaAs was studied for several solid compositions as a …
Influence of lattice mismatch on photoluminescence from liquid phase epitaxial grown InGaP on GaAs substrates
T Kato, T Matsumoto, T Ishida - Journal of crystal growth, 1985 - Elsevier
InGaP layers were grown on GaAs substrates by liquid phase epitaxial (LPE) growth using a
temperature difference growth technique under controlled phosphorus vapor pressure …
temperature difference growth technique under controlled phosphorus vapor pressure …
OMVPE growth of gallium indium phosphide on the {100} gallium arsenide using adduct compounds
S Minagawa, H Nakamura, H Sano - Journal of crystal growth, 1985 - Elsevier
Epitaxial layers of gallium indium phosphide were grown on the {100} surfaces of gallium
arsenide using an OMVPE (organometallic vapor phase epitaxial) growth technique which …
arsenide using an OMVPE (organometallic vapor phase epitaxial) growth technique which …
Effect of lattice mismatch between epitaxial layer and substrate on immiscibility of InGaAsP/GaAs LPE layers
S Tanaka, K Hiramatsu, Y Habu, I Akasaki - Journal of crystal growth, 1988 - Elsevier
The liquid phase epitaxy (LPE) growth of InGaAsP on GaAs in the immiscible region has
been studied in terms of the substrate induced stabilization. The results show that layers …
been studied in terms of the substrate induced stabilization. The results show that layers …
Influence of phosphorus evaporation from melt on InGaP/GaAs LPE growth
T Kato, T Matsumoto, Y Yoshioka… - Japanese journal of …, 1984 - iopscience.iop.org
The evaporation of phosphorus from the melt during LPE growth process causes poor
reproducibility of melt composition and crystal growth. In this letter, we show the effect of …
reproducibility of melt composition and crystal growth. In this letter, we show the effect of …
Influence of immiscibility in liquid‐phase epitaxy growth of InGaPAs on GaAs
M Kondo, S Shirakata, T Nishino… - Journal of Applied …, 1986 - pubs.aip.org
The liquid‐phase epitaxy (LPE) growth of InGaPAs grown on (100) GaAs substrate has been
studied under various growth conditions over the whole solid composition range. It has been …
studied under various growth conditions over the whole solid composition range. It has been …
LPE Growth of In1-xGaxP0. 96As0. 04 on GaAs Substrate by Two-Phase Melt Method.
S Shirakata, M Kondo, A Tsushi… - Japanese journal of …, 1985 - iopscience.iop.org
In 1-x Ga x P 0.96 As 0.04 LPE layers were grown on (100) GaAs substrates from a two-
phase solution with an excess GaP source at 785 C and 795 C. The relations between the …
phase solution with an excess GaP source at 785 C and 795 C. The relations between the …
Strain-energy-stabilized growth of InGaAsP layers on GaAs (111) A substrates in immiscible region
T Kato, T Matsumoto, T Kobatake… - Japanese journal of …, 1987 - iopscience.iop.org
High quality InGaAsP layers could be grown for a short growth period, even if the growth
was performed inside the immiscible region. When a quaternary solution was prepared for …
was performed inside the immiscible region. When a quaternary solution was prepared for …