This review is devoted to the analysis of the problems related to fabrication of the Si porous
layers. The review was motivated by a great interest to Si-based porous materials from nano …

The present review article is devoted to the analysis of the problems related to the design of
gas sensors based on porous semiconductors (PS). The peculiarities of the semiconductor …

This paper presents the structural and optical studies of porous GaN prepared by ultra-violet
(UV) assisted electrochemical etching under various conditions. The characteristics of the …

In this work, the double cell electrochemical etching technique is employed to study the
evolution of surface morphology during the etching of p-type gallium arsenide (GaAs) in a …

The fabrication and modulation of hexagonally ordered arrays of deep pores in (1 1 1) GaAs
were performed by combining colloidal crystal templating, anisotropic chemical etching …

P-type macroporous gallium phosphide (GaP) photoelectrodes have been prepared by
anodic etching of an undoped, intrinsically n-type GaP (100) wafer and followed by drive-in …

Porous GaAs layers have been formed by electrochemical anodic etching of (1 0 0) heavily
doped p-type GaAs substrate in a HF: C 2 H 5 OH solution. The surface morphology of …

This paper consists to present first results concerning the structure of porous GaAs layer (por-
GaAs-L) prepared by using HF/HNO 3 as acidic solution in vapor etching (VE) method. In …

Porous silicon based Al/porous Si/p+-Si heterojunction with porous silicon layer was
fabricated on low-resistivity crystalline silicon substrate by electrochemical anodisation …

Porous GaAs was formed by electrochemical etching of n-type GaAs wafers in HF-or HCl-
based solution with different current densities. The porous structure formation has been …