Atomic layer etching of tungsten for enhanced tungsten deposition fill
CS Lai, KJ Kanarik, S Tan, A Chandrashekar… - US Patent …, 2018 - Google Patents
US9972504B2 - Atomic layer etching of tungsten for enhanced tungsten deposition fill - Google
Patents US9972504B2 - Atomic layer etching of tungsten for enhanced tungsten deposition fill …
Patents US9972504B2 - Atomic layer etching of tungsten for enhanced tungsten deposition fill …
Etching substrates using ale and selective deposition
Methods of and apparatuses for processing substrates having carbon-containing material
using atomic layer deposition and selective deposition are provided. Methods involve …
using atomic layer deposition and selective deposition are provided. Methods involve …
Wafer edge ring lifting solution
MR Rice, YS VISHWANATH, S Srinivasan… - US Patent …, 2022 - Google Patents
Apparatuses including a height-adjustable edge ring, and methods for use thereof are
described herein. In one example, a substrate support assembly includes a height …
described herein. In one example, a substrate support assembly includes a height …
Adjustable extended electrode for edge uniformity control
Embodiments described herein generally related to a substrate processing apparatus. In
one embodiment, a process kit for a substrate processing chamber disclosed herein. The …
one embodiment, a process kit for a substrate processing chamber disclosed herein. The …
Substrate support with multiple embedded electrodes
PA Kraus, TC Chua, J Cho - US Patent 10,510,575, 2019 - Google Patents
(57) ABSTRACT A method and apparatus for biasing regions of a substrate in a plasma
assisted processing chamber are provided. Biasing of the substrate, or regions thereof …
assisted processing chamber are provided. Biasing of the substrate, or regions thereof …
Method of controlling ion energy distribution using a pulse generator with a current-return output stage
Embodiments of this disclosure describe an electrode bias-ing scheme that enables
maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at …
maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at …
Method of controlling ion energy distribution using a pulse generator with a current-return output stage
Embodiments of this disclosure describe an electrode biasing scheme that enables
maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at …
maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at …
Method of controlling ion energy distribution using a pulse generator with a current-return output stage
Embodiments of this disclosure describe an electrode biasing scheme that enables
maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at …
maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at …
Method of controlling ion energy distribution using a pulse generator with a current-return output stage
Embodiments of this disclosure describe an electrode biasing scheme that enables
maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at …
maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at …
Dry plasma etch method to pattern MRAM stack
S Tan, KIM Taeseung, W Yang, J Marks… - US Patent 10,374,144, 2019 - Google Patents
Methods of etching metal by depositing a material reactive with a metal to be etched and a
halogen to form a volatile species and exposing the substrate to a halogen-containing gas …
halogen to form a volatile species and exposing the substrate to a halogen-containing gas …