Low-frequency noise due to iron impurity centers in GaN-based HEMTs
DM Fleetwood, X Li, EX Zhang… - … on Electron Devices, 2024 - ieeexplore.ieee.org
Commercial Schottky-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) exhibit a
large peak in low-frequency (LF) noise magnitude at 325 K. An activation energy of …
large peak in low-frequency (LF) noise magnitude at 325 K. An activation energy of …
Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices
A re-evaluation of experimental results within the context of first-principles calculations
strongly suggests that interface traps can contribute significantly to low-frequency (1/f) noise …
strongly suggests that interface traps can contribute significantly to low-frequency (1/f) noise …
Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs
S Bonaldo, T Wallance, H Barnaby… - … on Nuclear Science, 2023 - ieeexplore.ieee.org
We provide comprehensive experimental data and technology computer-aided design
simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel …
simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel …
Bias and Temperature Dependence of Radiation-induced Degradation for SiC MOSFETs
C Peng, Z Lei, Z Zhang, Y He, T Ma… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
The influence of bias and temperature on total ionizing dose (TID) effects are studied for SiC
MOSFETs. The TID degradations are manifested as the negative threshold voltage shift and …
MOSFETs. The TID degradations are manifested as the negative threshold voltage shift and …