Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
GaAsBi: from molecular beam epitaxy growth to devices
RD Richards, NJ Bailey, Y Liu… - … status solidi (b), 2022 - Wiley Online Library
GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data
MP Polak, P Scharoch… - … Science and Technology, 2015 - iopscience.iop.org
Bi-induced changes in the band structure of Ga–V–Bi and In–V–Bi alloys are calculated
within the density functional theory (DFT) for alloys with Bi≤ 3.7% and the observed …
within the density functional theory (DFT) for alloys with Bi≤ 3.7% and the observed …
[图书][B] Bismuth-containing alloys and nanostructures
S Wang, P Lu - 2019 - Springer
Bismuth (Bi), discovered in 1753, is the heaviest non-radioactive element in the periodic
table. The interest in using Bi in solid-state devices in early days was mainly focused on …
table. The interest in using Bi in solid-state devices in early days was mainly focused on …
Bandgap and optical absorption edge of GaAs1− xBix alloys with 0< x< 17.8%
M Masnadi-Shirazi, RB Lewis… - Journal of Applied …, 2014 - pubs.aip.org
The compositional dependence of the fundamental bandgap of pseudomorphic GaAs 1− x
Bi x layers on GaAs substrates is studied at room temperature by optical transmission and …
Bi x layers on GaAs substrates is studied at room temperature by optical transmission and …
[HTML][HTML] Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices
RD Richards, A Mellor, F Harun, JS Cheong… - Solar Energy Materials …, 2017 - Elsevier
A series of strained GaAsBi/GaAs multiple quantum well diodes are characterised to assess
the potential of GaAsBi for photovoltaic applications. The devices are compared with …
the potential of GaAsBi for photovoltaic applications. The devices are compared with …
GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique
Abstract We report a GaAs 0.96 Bi 0.04/GaAs multiple quantum well (MQW) light emitting
diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) …
diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) …
Experimental and theoretical studies of band gap alignment in GaAs1− xBix/GaAs quantum wells
R Kudrawiec, J Kopaczek, MP Polak… - Journal of Applied …, 2014 - pubs.aip.org
Band gap alignment in GaAs 1− x Bi x/GaAs quantum wells (QWs) was studied
experimentally by photoreflectance (PR) and theoretically, ab initio, within the density …
experimentally by photoreflectance (PR) and theoretically, ab initio, within the density …
Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires
GaAsBi nanowires represent a novel and promising material platform for future nano-
photonics. However, the growth of high-quality GaAsBi nanowires and GaAsBi alloy is still a …
photonics. However, the growth of high-quality GaAsBi nanowires and GaAsBi alloy is still a …
ZnO quantum dots@ nitrogen and sulfur Co-doped porous carbon nanosheets for the detection of lung cancer biomarkers in exhaled breath
K Nithyakalyani, MCJ Christ - Materials Science in Semiconductor …, 2023 - Elsevier
The development of non-selective sensors as an e-nose system for breath analysis
application generates unique breath prints delineating the fundamental body metabolism …
application generates unique breath prints delineating the fundamental body metabolism …