Two-dimensional materials prospects for non-volatile spintronic memories
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …
2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …
discovered through the extensive experimental and theoretical efforts of chemists, material …
Vertical MoS2 transistors with sub-1-nm gate lengths
Ultra-scaled transistors are of interest in the development of next-generation electronic
devices,–. Although atomically thin molybdenum disulfide (MoS2) transistors have been …
devices,–. Although atomically thin molybdenum disulfide (MoS2) transistors have been …
Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire
Two-dimensional transition-metal dichalcogenides (TMDs) are of interest for beyond-silicon
electronics,. It has been suggested that bilayer TMDs, which combine good electrostatic …
electronics,. It has been suggested that bilayer TMDs, which combine good electrostatic …
Approaching the quantum limit in two-dimensional semiconductor contacts
The development of next-generation electronics requires scaling of channel material
thickness down to the two-dimensional limit while maintaining ultralow contact resistance …
thickness down to the two-dimensional limit while maintaining ultralow contact resistance …
Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors
Abstract Two-dimensional (2D) semiconductors are promising channel materials for next-
generation field-effect transistors (FETs). However, it remains challenging to integrate …
generation field-effect transistors (FETs). However, it remains challenging to integrate …
Transistors based on two-dimensional materials for future integrated circuits
Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
Two-dimensional devices and integration towards the silicon lines
Despite technical efforts and upgrades, advances in complementary metal–oxide–
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …
Ballistic two-dimensional InSe transistors
Abstract The International Roadmap for Devices and Systems (IRDS) forecasts that, for
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …
[HTML][HTML] Hybrid 2D–CMOS microchips for memristive applications
Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate
advanced electronic circuits is a major goal for the semiconductor industry,. However, most …
advanced electronic circuits is a major goal for the semiconductor industry,. However, most …