A method for calculating the electronic states and optical properties of multidimensional
semiconductor quantum structures is described. The method is applicable to …

Fundamental and applied aspects of luminescence of colloidal quantum dots - IOPscience
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In GaAsP epitaxial layers emitting in the 1.25− 1.37 μm wavelength region have been
evaluated using transmission electron microscopy, X-ray diffraction and photoluminescence …

Rapid decrease of differential gain has been determined to dominate the temperature
dependence of threshold current in 1.3-/spl mu/m multiquantum well and bulk active lasers …

Люминесценция как физическое явление известна очень давно, и стремление
выяснить её природу в течение нескольких столетий занимало умы многих великих …

Epitaxial layers of In1− xGaxAsyP1− y have been grown lattice-matched to (100) InP
substrates over a wide alloy range using gas source molecular beam epitaxy (GSMBE) …

We describe optical properties of single and multiple quantum well structures grown by gas
source molecular beam epitaxy. Absorption and photoluminescence were used in …

GaInAsP alloys, lattice-matched to InP, are semiconductor materials with important
technological applications in optical electronics I and high-speed digital circuits. 2 Central to …

We report the observation of photoluminescence produced by the recombination of free
carriers generated via continuous-wave (CW) two-photon absorption (TPA) in a packaged …

According to the principle of detailed balance, the luminescence intensity at a wavelength λ
1 as a result of excitation at a wavelength λ 2 must be related in some way to the …