Optical Properties of Ga1-xInxAs/InP Quantum Wells
H Temkin, D Gershoni, MB Panish - Semiconductors and Semimetals, 1994 - Elsevier
In the past few years, high quality quantum wells of Ga 1-x In x As/InP have been grown and
structurally characterized by precision X-ray diffraction and transmission electron …
structurally characterized by precision X-ray diffraction and transmission electron …
Investigation of anomalous optical characteristics of InGaAsP layers on GaAs substrates grown by metalorganic vapor phase epitaxy
K Ono, M Takemi - Japanese journal of applied physics, 2008 - iopscience.iop.org
We investigated the growth of InGaAsP layers on GaAs substrates by metalorganic vapor
phase epitaxy (MOVPE) for application in optical devices. Anomalous large redshifts of …
phase epitaxy (MOVPE) for application in optical devices. Anomalous large redshifts of …
Properties of undoped and manganese-doped InGaAsP grown by liquid phase electroepitaxy
SN Iyer, A Abul-Fadl, WJ Collis, MN Khorrami - Thin Solid Films, 1988 - Elsevier
Undoped and manganese-doped InGaAsP epilayers lattice matched to InP substrate have
been grown by the liquid phase electroepitaxy technique. The dependence of growth …
been grown by the liquid phase electroepitaxy technique. The dependence of growth …
[PDF][PDF] Computer simulations of interaction effects in soliton transmission, for students training
AD Petrescu, AR Sterian, PE Sterian - Annals of the Academy of …, 2008 - academia.edu
This paper aims to present some numerical simulations of tri-soliton propagation, based on
Körteweg-de Vries (KdV) equation using (Maple11), a powerful program that permits to …
Körteweg-de Vries (KdV) equation using (Maple11), a powerful program that permits to …
Performance of the optically-coupled current-mirror with its input stage cooled to cryogenic temperature
DV Camin, V Grassi - IEEE transactions on nuclear science, 2006 - ieeexplore.ieee.org
The Optically-Coupled Current-Mirror (OCCM) is a novel feedback circuit architecture that
allows linear transmission of analog signals via optical fibers. Its most distinctive feature is …
allows linear transmission of analog signals via optical fibers. Its most distinctive feature is …
The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE under nonequilibrium conditions
M Ketata, K Ketata, S Koumetz, J Marcon… - The European Physical …, 1999 - cambridge.org
This study reports on Be diffusion in InGaAsP layers grown by gas source molecular beam
epitaxy. The experimental structures consisted of a 2000 Å Be-doped (3× 109 cm− 3) In0 …
epitaxy. The experimental structures consisted of a 2000 Å Be-doped (3× 109 cm− 3) In0 …
A photoluminescence technique for characterizing the GaInAsP channeled substrate buried heterostructure wafer for lasing wavelength
V Swaminathan, CA Green, DTC Huo… - Journal of Materials …, 1988 - cambridge.org
A photoluminescence technique to characterize, for lasing wavelength, the channeled
substrate buried heterostructure wafer grown for fabricating lasers for undersea transmission …
substrate buried heterostructure wafer grown for fabricating lasers for undersea transmission …
[图书][B] Indium phosphide-based microring resonator-coupled lasers
Z Bian - 2004 - search.proquest.com
Wavelength-tunable semiconductor lasers are desirable light sources in wavelength-
division multiplexed (WDM) fiber optic communication systems. Important parameters are …
division multiplexed (WDM) fiber optic communication systems. Important parameters are …
Photovoltaic spectroscopy of InGaAsP/InP multiple quantum wells
P Demerdjiev, E Fortin, AP Roth - Superlattices and microstructures, 1995 - Elsevier
Photovoltaic Spectroscopy is used to study lattice matched Au/InGaAsP/InP multiple
quantum wells at 4.2< T< 300 K. Four quantum transitions are clearly identified in the …
quantum wells at 4.2< T< 300 K. Four quantum transitions are clearly identified in the …