Accurate Evaluation of Electro-Thermal Performance in Silicon Nanosheet Field-Effect Transistors with Schemes for Controlling Parasitic Bottom Transistors
J Jeong, S Lee, RH Baek - Nanomaterials, 2024 - mdpi.com
The electro-thermal performance of silicon nanosheet field-effect transistors (NSFETs) with
various parasitic bottom transistor (trpbt)-controlling schemes is evaluated. Conventional …
various parasitic bottom transistor (trpbt)-controlling schemes is evaluated. Conventional …
Strain Evolution in SiGe Nanosheet Transistor Process Flow
HC Chou, T Chou, SJ Chueh, SR Jan… - … on Electron Devices, 2024 - ieeexplore.ieee.org
The step-by-step strain evolution in the channel during the SiGe nanosheet (NS) integration
process flow for pFETs is demonstrated using finite element analysis (FEA). The effect of …
process flow for pFETs is demonstrated using finite element analysis (FEA). The effect of …