Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …

This paper investigates the various device dimensions such as gate length (Lg), nanosheet
thickness (TNS), and nanosheet width to optimize the design space for vertically stacked …

Complementary FET (CFET) is a promising booster for further area reductions in static
random-access memory (SRAM) cells. However, the performance degrading by a series of …

In this article, one feasible fabrication approach for novel fishbone FETs using the channel-
first and single work function metal (sWFM) processes is proposed and investigated by 3-D …

After more than five decades, Moore's Law for transistors is approaching the end of the
international technology roadmap of semiconductors (ITRS). The fate of complementary …

Complementary FET (CFET) is a promising candidate for CMOS scaling beyond 3-nm
technology node. In this article, a novel hybrid channel CFET (HC-CFET) is proposed, which …

Gate-all-around (GAA) structures are important for future logic devices and 3D-DRAM. Inner-
spacer cavity etching and channel release both require selective etching of Si0. 7Ge0. 3 …

The effect of the source/drain compressive stress on the mechanical stability of stacked Si
nanosheets (NS) during the process of channel release has been investigated. The stress of …

Based on the bulk-Si substrate, the CMOS tree-like FETs including the FishboneFETs with
bottom SiGe nano-fin and the TreeFETs without bottom SiGe nano-fin were both designed …

Abstract The nanosheet Field Effect Transistors (FETs) are the promising device architecture
for sub-5 nm technology node as per the International Roadmap for Devices and Systems …