A content addressable memory cell includes a first floating body transistor and a second
floating body transistor. The first floating body transistor and the second floating body …

A content addressable memory cell includes a first floating body transistor and a second
floating body transistor. The first floating body transistor and the second floating body …

(57) ABSTRACT A non-volatile memory device integrated in a chip of semi conductor
material. An embodiment of a memory device includes a plurality of memory cells. Each …

G11C15/00—Digital stores in which information comprising one or more characteristic parts
is written into the store and in which information is read-out by searching for one or more of …

A non-volatile memory includes cells arranged in rows and columns. Each memory cell
includes an access portion and a control portion. The access and control portions share an …

BACKGROUND As is known, the production of integrated devices envis ages testing steps
that allow to check proper operation of the components obtained. Tests of this kind, such as …

The present invention provides a non-volatile memory device using a memory transistor
including an oxide semiconductor, capable of writing with low power consumption, without …

Methods of operating a memory device applying a program ming pulse having a plurality of
different voltage levels to an access line coupled to a plurality of memory cells, enabling a …

An embodiment of a non-volatile memory device integrated in a chip of semiconductor
material is proposed. The memory device includes a plurality of memory cells. Each memory …

According to an embodiment, an operational amplifier includes a first amplifier stage
coupled between an input node and an intermediate node, a second amplifier stage …